Details, datasheet, quote on part number: QM50E2Y/E3Y-2H
PartQM50E2Y/E3Y-2H
CategoryDiscrete => Thyristors
Description
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM50E2Y/E3Y-2H datasheet
Quote
Find where to buy
 
  

 

Features, Applications

IC Collector current.......................... 50A VCEX Collector-emitter voltage......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings Unit

Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing

Conditions Ratings 800 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current Unit A2s

Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage

Conditions Ratings 40~150 40~125 Charged part to case, AC for 1 minute Main terminal screw M5 Unit C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=1000V, Emitter open IB=1A IC=50A (diode forward voltage) IC=50A, VCE=2.8V/5V Min. IC=50A, IB1=IB2=1A Transistor part Diode part Conductive grease applied Typ. Max. Unit V s C/ W C/ W C/ W

Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance

Test conditions VR=VRRM, VR=600V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. Typ. Max. Unit s C C/ W C/ W

COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)


 

Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM50E2Y/E3Y-H
QM50E3Y-2H Transistor Module Medium Power Switching Use Insulated
QM50E3Y-H Transistor Module Medium Power Switching Use Insulated Type
QM50HA-H
QM50HA-HB
QM50HY-2H
QM50TB-24
QM50TB-24B
QM50TB-2H Transistor Module, Medium Power Switching Use, Insulated Type
QM50TB-2HB Transistor Module Medium Power Switching Use Insulated Type
QM50TF-HB
QM50TX-H
QM50TX-HB
QM5HG-24 Transistor Module, Medium Power Use Insulated Type, Glass Passivation Type
QM600HD-M 600A - Transistor Module For Medium Power Switching Use, Non-insulated Type
QM75CY-H Transistor Module High Power Switching Use Insulated Type
QM75DY-24
QM75DY-24B
QM75DY-2H
QM75DY-2HB
QM75DY-H

M38023E3-XXXFP : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer

M38023M4-XXXSS : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer

M38033F8-SP : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer

M38034F1-HP : RAM Size: 640bytes; Single-chip 8-bit CMOS Microcomputer

M38064EBDXXXFS : RAM Size: 640bytes; Single-chip 8-bit CMOS Microcomputer

M38220E4DFS : RAM Size: 192 Bytes; Single-chip 8-bit CMOS Microcomputer

M38221MBMXXXHP : RAM Size: 256 Bytes; Single-chip 8-bit CMOS Microcomputer

M38277E1-XXXFS : Single-chip 8-bit CMOS Microcomputer

M38749EFT-XXXFS : Single-chip 8-bit CMOS Microcomputer

M5M5V008CVP-55HI : 1048576-bit (131072-word BY 8-bit) CMOS Static RAM

Same catergory

163CMQ : >100 Amp. Schottky Rectifier 160 Amp. IF(AV) Rectangular waveform VRRM range IFSM 5 s sine @ 80 Apk, = 125C (per leg) range The 163CMQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 C junction temperature. Typical applications are in switching power.

1N1191 : Standard Rectifier (trr More Than 500ns), Package : DO-5.

1N4001-B : 1.0A,50V,STD,DO-41. Low cost Low leakage Low forward voltage drop High current capability Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.33 gram Ratings 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

1N6461thru1N6468 : Transient Suppressor 500 Watts 5.6v Thru 54.0v.

2SB0788 : VCEO(V) = -120 ;; IC(A) = -0.02 ;; HFE(min) = 180 ;; HFE(max) = 520 ;; Package = M-A1.

BUZ900CDP : Transistor MOSFET To-264. HIGH SPEED SWITCHING NCHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE & 200V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE PCHANNEL ALSO AVAILABLE & BUZ906DP DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE (Tcase = 25C unless otherwise stated) VDSX Drain Source Voltage VGSS ID ID(PK) PD Tstg Tj RJC Gate.

BZX55-C10 : Package Type : DO-35G, PD : 500mW, VZ : 10V. Silicon Planar Power Zener Diodes Glass Package Symbol PD RJA TJ TSTG Rating Power dissipation Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Rating to +150 Unit mW O C/W Note: (1) Valid provided that leads at a distance of 3/8" from case are kept at ambient temperature. .

MCH3302 : . s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current.

RH3F : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

APM7334KC-TRG : 8 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0180 ohms ; Package Type: GREEN, SOP-8 ; Number of units in IC: 2.

ECV1ZW04X53T : CAPACITOR, VARIABLE, CERAMIC, 250 V, 1.5 pF - 5.5 pF, VERTICAL ADJUSTER, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Type: Variable ; RoHS Compliant: Yes ; Capacitance Range: 1.50E-6 to 5.50E-6 microF ; WVDC: 250 volts ; Mounting Style:.

FDMS7678 : POWER, FET. Max rDS(on) m at VGS 17.5 A Max rDS(on) m at VGS 15 A High performance technology for extremely low rDS(on) Termination is Lead-free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power.

HM55-1000-AB10 : RESISTOR, METAL FILM, 0.2 W, 0.05 %, 10 ppm, 100 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100 ohms ; Tolerance: 0.0500 +/- % ; Temperature Coefficient: 10 ±ppm/°C ; Power Rating: 0.2000 watts (2.68E-4 HP) ; Operating.

IRF840BPBF : POWER, FET. VDS (V) at TJ max. RDS(on) max. C Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS 4 7 Single 550 0.85 Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry.

KTC4373-TP : 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, PLASTIC PACKAGE-3.

MSCD102-CSCSCS01845 : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

UCN033B121K : CAPACITOR, CERAMIC, 50 V, B, 0.00012 uF, SURFACE MOUNT. s: Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature: -13 to 185 F (248 to 358 K).

250PX0R47MFA6.3X11 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 0.47 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 0.4700 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 250 volts ; Leakage Current: 51.75 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

 
0-C     D-L     M-R     S-Z