Details, datasheet, quote on part number: QM75E3Y-2H
PartQM75E3Y-2H
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module High Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM75E3Y-2H datasheet
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Features, Applications

IC Collector current.......................... 75A VCEX Collector-emitter voltage......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271


Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings Unit

Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing

Conditions Ratings 800 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current Unit A2s

Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage

Conditions Ratings 40~150 40~125 Charged part to case, AC for 1 minute Main terminal screw M5 Unit C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=1000V, Emitter open IB=1.5A IC=75A (diode forward voltage) IC=75A, VCE=2.8V/5V Min. IC=75A, IB1=IB2=1.5A Transistor part Diode part Conductive grease applied Typ. Max. Unit V s C/ W C/ W C/ W

Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance

Test conditions VR=VRRM, VR=600V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. Typ. Max. Unit s C C/ W C/ W

COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C COLLECTOR CURRENT IC (A) IB=1.5A DC CURRENT GAIN hFE IB=0.1A DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C


 

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