Details, datasheet, quote on part number: MC-4516CB646EF-A80
PartMC-4516CB646EF-A80
CategoryAnalog & Mixed-Signal Processing
Description16m-word BY 64-bit Synchronous Dynamic RAM Module Unbuffered Type
CompanyNEC Electronics Inc.
DatasheetDownload MC-4516CB646EF-A80 datasheet
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Features, Applications

Description

The a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.

Features
16,777,216 words by 64 bits organization Clock frequency and access time from CLK

Part number /CAS latency Clock frequency (MAX.) 2 125 MHz 100 MHz 100 MHz 77 MHz 125 MHz 100 MHz 100 MHz 77 MHz Access time from CLK (MAX.) 7 ns

Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Pulsed interface Possible to assert random column address in every cycle Quad internal banks controlled by BA0 and BA1 (Bank Select) Programmable burst-length and full page) Programmable wrap sequence (sequential / interleave) Programmable /CAS latency (2, 3) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh All DQs have % of series resistor Single 0.3 V power supply LVTTL compatible 4,096 refresh cycles/64 ms Burst termination by Burst Stop command and Precharge command 168-pin dual in-line memory module (Pin pitch = 1.27 mm) Unbuffered type Serial PD

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. M14334EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan

Part number Clock frequency MHz (MAX.) MC-4516CB646EF-A10 125 MHz 100 MHz 125 MHz 100 MHz 168-pin Dual In-line Memory Module (Socket Type) Edge connector : Gold plated 34.93 mm height 8 pieces of µPD45128841G5 (Rev. mm (400) TSOP (II)) 8 pieces of µPD45128841G5 (Rev. mm (400) TSOP (II)) Package Mounted devices

168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)

A11 : Address Inputs [Row: - A11, Column: (A12) : SDRAM Bank Select /CS0, /CS2 /RAS /CAS /WE - SA2 SDA SCL VCC VSS NC : Data Inputs/Outputs : Clock Input : Clock Enable Input : Chip Select Input : Row Address Strobe : Column Address Strobe : Write Enable : DQ Mask Enable : Address Input for EEPROM : Serial Data I/O for PD : Clock Input for PD : Power Supply : Ground : Write Protect : No Connection


 

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