Details, datasheet, quote on part number: MC-4516CB647
CategoryAnalog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers
Description16m-word BY 64-bit Synchronous Dynamic RAM Module Unbuffered Type
CompanyNEC Electronics Inc.
DatasheetDownload MC-4516CB647 datasheet
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Features, Applications


The MC-4516CB647EF and MC-4516CB647PF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: PD45128841 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.

16,777,216 words by 64 bits organization Clock frequency and access time from CLK

Part number /CAS latency Clock frequency (MAX.) 2 133 MHz 100 MHz 133 MHz 100 MHz Access time from CLK (MAX.) 6.0 ns

Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge Pulsed interface Possible to assert random column address in every cycle Quad internal banks controlled by BA0 and BA1 (Bank Select) Programmable burst-length and full page) Programmable wrap sequence (sequential / interleave) Programmable /CAS latency (2, 3) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh All DQs have % of series resistor Single 0.3 V power supply LVTTL compatible 4,096 refresh cycles/64 ms Burst termination by Burst Stop command and Precharge command 168-pin dual in-line memory module (Pin pitch = 1.27 mm) Unbuffered type Serial PD

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. M14406EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan

Part number Clock frequency (MAX.) MC-4516CB647EF-A75 133 MHz 168-pin Dual In-line Memory Module (Socket Type) 8 pieces of PD45128841G5 (Rev. mm (400) TSOP (II)) 8 pieces of PD45128841G5 (Rev. mm (400) TSOP (II)) Package Mounted devices

168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)

A11 : Address Inputs [Row: - A11, Column: (A12) : SDRAM Bank Select /CS0, /CS2 /RAS /CAS /WE - SA2 SDA SCL VCC VSS NC : Data Inputs/Outputs : Clock Input : Clock Enable Input : Chip Select Input : Row Address Strobe : Column Address Strobe : Write Enable : DQ Mask Enable : Address Input for EEPROM : Serial Data I/O for PD : Clock Input for PD : Power Supply : Ground : Write Protect : No Connection


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MC-4516CB647EF-A75 16m-word BY 64-bit Synchronous Dynamic RAM Module Unbuffered Type
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MC-4516CD641ES-A80L 128M-byte(16M-word X 64-bit) Sdram so Dimm
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MC-4516CD64ES 16 M-word BY 64-bit Synchronous Dynamic RAM Module so Dimm
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