Details, datasheet, quote on part number: MC-45D16CA721KF-C80
PartMC-45D16CA721KF-C80
CategoryAnalog & Mixed-Signal Processing
Description16 M-word BY 72-bit DDR Synchronous Dynamic RAM Module Unbuffered Type
CompanyNEC Electronics Inc.
DatasheetDownload MC-45D16CA721KF-C80 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Description

The a 16,777,216 words by 72 bits DDR synchronous dynamic RAM module on which 9 pieces of 128M DDR SDRAM: µPD45D128842 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.

Features
16,777,216 words by 72 bits organization (ECC type) Clock frequency

Part number /CAS latency Clock frequency (MAX.) 2 133 MHz 100 MHz 125 MHz 100 MHz DDR SDRAM Unbuffered DIMM Design specification Rev.0.9 compliant Module type

Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced to a positive clock edge Double Data Rate interface Differential CLK (/CLK) input Data inputs and DM are synchronized with both edges of DQS Data outputs and DQS are synchronized with a cross point of CLK and /CLK Quad internal banks operation Possible to assert random column address in every clock cycle Programmable Mode register set /CAS latency (2, 2.5) Burst length 4, 8) Wrap sequence (Sequential / Interleave) Automatic precharge and controlled precharge CBR (Auto) refresh and self refresh 0.2 V Power supply for VDD 0.2 V Power supply for VDDQ SSTL_2 compatible with all signals 4,096 refresh cycles / 64 ms Burst termination by Precharge command and Burst stop command 184-pin dual in-line memory module (Pin pitch = 1.27 mm) Unbuffered type Serial PD

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. M14898EJ2V0DS00 (2nd edition) Date Published June 2000 NS CP(K) Printed in Japan
Part number Clock frequency (MAX.) 133 MHz Package Mounted devices

184-pin Dual In-line Memory Module 9 pieces of µPD45D128842G5 (Rev. K) (Socket Type) mm (400) TSOP (II))

184-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)

VSS DQ4 DQ5 VDDQ DQ6 DQ7 VSS NC VDDQ DQ13 DM1/DQS10 VDD DQ15 NC VDDQ DQ20 NC VSS A11 DM2/DQS11 VDD A8 DQ23 VSS DQ28 DQ29 VDDQ A3 DQ30 VSS CB4 CB5 VDDQ CK0 /CK0 VSS A10 CB6 VDDQ CB7 VSS DQ36 DQ37 VDD DQ38 DQ39 VSS DQ44 /RAS DQ45 VDDQ NC DM5/DQS14 VSS DQ47 NC VDDQ DQ53 NC VDD DQ54 DQ55 VDDQ DQ60 DQ61 VSS DQ62 DQ63 VDDQ SA1 SA2 VDDSPD

VREF DQ0 VSS DQS0 DQ2 VDD DQ3 NC /RESET VSS DQ9 DQS1 VDDQ CK1 /CK1 VSS DQ11 CKE0 VDDQ DQ17 DQS2 VSS DQ18 A7 VDDQ A5 DQ24 VSS DQS3 A4 VDD DQ27 A2 VSS CB0 CB1 VDD A0 CB2 VSS BA1 DQ32 VDDQ DQS4 DQ34 VSS DQ35 DQ40 VDDQ /WE DQ41 /CAS VSS DQ42 DQ43 VDD DQ48 DQ49 VSS CK2 /CK2 VDDQ DQ50 DQ51 VSS VDDID DQ56 DQ57 VDD DQ58 DQ59 VSS NC SDA SCL

: Address Inputs : SDRAM Bank Select : Clock Input : Clock Input : Clock Enable Input : Chip Select Input : Row Address Strobe : Column Address Strobe : Write Enable : Low Data Strobe High Data Strobe

[Row: - A11, Column: CB7 : Data Inputs/Outputs (positive line of differential pair) (negative line of differential pair)

17) : Low Data Masks - SA2 SDA SCL VDD VSS VDDID VDDQ VREF VDDSPD NC /RESET : Address Input for EEPROM : Serial Data I/O for PD : Clock Input for PD : Power Supply : Ground : VDD Identification Flag : Power Supply for DQ and DQS : Input Reference : Power supply for EEPROM : No Connection : Reset Input


 

Related products with the same datasheet
MC-45D16CA721KF-C75
Some Part number from the same manufacture NEC Electronics Inc.
MC-45D16CB641 16 M-word BY 64-bit DDR Synchronous Dynamic RAM Module Unbuffered Type
MC-45D32CC721 32 M-word BY 72-bit DDR Synchronous Dynamic RAM Module Unbuffered Type
MC-45D32CD641 32 M-word BY 64-bit DDR Synchronous Dynamic RAM Module Unbuffered Type
MC-45V16AD641 16m-word BY 64-bit Virtualchannel Synchronous Dynamic RAM Module Unbuffered Type
MC-45V16AD641KF-A15 128M-byte(16M-word X 64-bit) Virtual Channel(TM) Sdram Dimm
MC-45V16AD641KF-A75 16m-word BY 64-bit Virtualchannel Synchronous Dynamic RAM Module Unbuffered Type
MC-45V8AB641 8m-word BY 64-bit Virtualchannel Synchronous Dynamic RAM Module Unbuffered Type
MC-45V8AB641EF-A10 64M-byte(8M-word X 64-bit) Virtual Channel(TM) Sdram Dimm
MC-45V8AB641KF-A10
MC-45V8AB641KF-A15
MC-45V8AB641KF-A75
MC-45V8AB641KFA-A10 8m-word BY 64-bit Virtualchannel Synchronous Dynamic RAM Module Unbuffered Type
MC-4R128CEE6B Direct RAMbus DRAM Rimm Module 128m-byte 64m-word X 16-bit
MC-4R128CEE6C
MC-4R128CPE6C
MC-4R192CPE6C Direct RAMbus DRAM Rimm Module 192m-byte 96m-word X 16-bit
MC-4R256CEE6B Direct RAMbus DRAM Rimm Module 256m-byte 128m-word X 16-bit
MC-4R256CEE6C
MC-4R256CPE6C
MC-4R64CEE6B Direct RAMbus DRAM Rimm Module 64m-byte 32m-word X 16-bit
MC-4R64CEE6C

2SJ184-T : P-channel Power MOS Fet

2SK1283 : Switching N-channel Power MOSFET Industrial Use

UPA1437 : PNP Silicon Power Transistor Array Low Speed Switching Use Darlington Transistor Industrial Use

UPA1813 : P-channel MOS Field Effect Transistor For Switching

UPD75106 :

2SK3575-Z : Switching N-channel Power Mosfet

2SK3571 : Switching N-channel Power Mosfet

PS7241-AT1-F4 : 4-pin SOP 400 V Break DOWN Voltage Normally Close TYPE 1-ch Optical Coupled MOS FET

 
0-C     D-L     M-R     S-Z