Details, datasheet, quote on part number: Z0103MARLRFG
CategoryDiscrete Semiconductor Products
TitleTriac Discrete Semiconductor Product 1A 600V Logic - Sensitive Gate
CompanyON Semiconductor
DatasheetDownload Z0103MARLRFG datasheet
Cross ref.Similar parts: Z0103MA2AL2, Z0103MA2AL2
Find where to buy
Triac TypeLogic - Sensitive Gate
Voltage - Off State600V
Current - On State (It (RMS)) (Max)1A
Voltage - Gate Trigger (Vgt) (Max)1.3V
Current - Gate Trigger (Igt) (Max)3mA
Current - Hold (Ih) (Max)10mA
Current - Non Rep. Surge 50, 60Hz (Itsm)8A @ 60Hz
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Z0103MARLRFG photo


Features, Applications

Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment.

One-Piece, Injection-Molded Package Blocking Voltage 600 V Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all

possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110C) Commutating di/dt of 1.6 A/msec at 110C High Surge Current 8 A These are Pb-Free Devices

Rating Peak Repetitive Off-State Voltage (TJ to +125C)(1) Sine Wave to 60 Hz, Gate Open On-State RMS Current Full Cycle Sine Wave 60 Hz (TC = 50C) Peak Non-Repetitive Surge Current One Full Cycle, Sine Wave 60 Hz (TC = 110C) Circuit Fusing Considerations = 8.3 ms) Average Gate Power (TC v 8.3 ms) Peak Gate Current v 20 ms, = +125C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) Value 600 Unit V

Y = Year WW = Work Week G = Pb-Free Package (*Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol RqJC RqJA TL Max 160 260 Unit C/W C

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)

Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (ITM "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Latching Current (VD 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, W) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types Gate Non-Trigger Voltage (VD = 125C) All Four Quadrants Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD 400 V, ITM 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open, = 250 Hz, with Snubber) Critical Rate of Rise of Off-State Voltage (VD = 67% Rated VDRM, Exponential Waveform, Gate Open, = 110C) Repetitive Critical Rate of Rise of On-State Current, = 125C Pulse Width = 20 ms, IPKmax 15 A, diG/dt = 1 A/ms, 60 Hz di/dt(c) 1.6 - A/ms VTM IGT = +125C IDRM, IRRM mA Symbol Min Typ Max Unit

Voltage Current Characteristic of Triacs (Bidirectional Device)

Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal - IH VTM IRRM at VRRM on state IH

All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.


Some Part number from the same manufacture ON Semiconductor
Z0107MAG Specifications: Triac Type: Logic - Sensitive Gate ; Configuration: Single ; Voltage - Off State: 600V ; Current - On State (It (RMS)) (Max): 1A ; Voltage - Gate Trigger (Vgt) (Max): 1.3V ; Current - Gate
MC10H124FNR2G Quad TTL to Ecl Translator , Package: Plcc, Pins=20
NP2300SCMCT3G Specifications: Package / Case: DO-214AA, SMB ; Packaging: Tape & Reel (TR) ; Capacitance: 33pF ; Voltage - Breakover: 260V ; Current - Peak Pulse (8 x 20s): 400A ; Current - Peak Pulse (10 x 1000s):
CSPESD304G Specifications: Resistance (Ohms): - ; Capacitance: 27pF ; Power (Watts): 0.2W, 1/5W ; Tolerance: - ; Package / Case: 5-UFBGA, WLCSP ; Packaging: Tape & Reel (TR) ; Lead Free Status: Lead Free ; RoHS
ESD7104MUTAG Specifications: Package / Case: 10-UFDFN ; Packaging: Tape & Reel (TR) ; Polarization: 4 Channel Array - Bidirectional ; Power (Watts): - ; Voltage - Reverse Standoff (Typ): 5V ; Voltage - Breakdown:
SRDA3.3-4DR2G Specifications: Package / Case: 8-SOIC (0.154", 3.90mm Width) ; Packaging: Tape & Reel (TR) ; Polarization: 4 Channel Array - Bidirectional ; Power (Watts): 500W ; Voltage - Reverse Standoff (Typ):
ESD1014MUTAG Specifications: Package / Case: 10-UFDFN Exposed Pad ; Packaging: Tape & Reel (TR) ; Polarization: 4 Channel Array - Bidirectional ; Power (Watts): 450W ; Voltage - Reverse Standoff (Typ): 3.3V ; Voltage
0-C     D-L     M-R     S-Z