Details, datasheet, quote on part number: Z0107MNT1G
PartZ0107MNT1G
CategoryDiscrete Semiconductor Products
TitleTriac Discrete Semiconductor Product 1A 600V Logic - Sensitive Gate
Description
CompanyON Semiconductor
DatasheetDownload Z0107MNT1G datasheet
Cross ref.Similar parts: BT134W-600D, STM1A60, Z0103MN, Z0107MN6AA4, Z0107MN5AA4, Z0107SN5AA4, Z0109SN5AA4, Z0110SN5AA4
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Specifications 
Triac TypeLogic - Sensitive Gate
ConfigurationSingle
Voltage - Off State600V
Current - On State (It (RMS)) (Max)1A
Voltage - Gate Trigger (Vgt) (Max)1.3V
Current - Gate Trigger (Igt) (Max)5mA
Current - Hold (Ih) (Max)10mA
Current - Non Rep. Surge 50, 60Hz (Itsm)8A @ 60Hz
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Z0107MNT1G photo

 

Features, Applications

Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing.

Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package These are Pb-Free Devices

Rating Peak Repetitive Off-State Voltage (Note 1) (Sine Wave, to 60 Hz, Gate Open, to +125C) On-State Current RMS (TC = 80C) (Full Sine Wave to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, = 25C) Circuit Fusing Considerations (Pulse Width = 8.3 ms) Average Gate Power (TC v 8.3 ms) Peak Gate Current v 20 ms, = +125C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM I2t PG(AV) IGM TJ Tstg Value 600 Unit V SOT-223 CASE 318E STYLE 11 10XMN

= Assembly Location = Year = Work Week = Device Code G = Pb-Free Package (Note: Microdot may be in either location)

C Main Terminal 1 Main Terminal 2 Gate Main Terminal 2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Characteristic Thermal Resistance, Junction-to-Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction-to-Tab Measured on MT2 Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum Symbol RqJA RqJT TL Max 25 260 Unit C/W C

Device Z0107MNT1G Z0109MNT1G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 1000/Tape & Reel 1000/Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) = +125C IDRM, IRRM mA

Peak On-State Voltage (ITM "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, = 30 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, = 30 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, = 30 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Latching Current (VD 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types Latching Current (VD 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types Latching Current (VD 1.2 x IGT) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, = 30 Ohms) Gate Non-Trigger Voltage (VD = 30 Ohms, = 125C) All Four Quadrants Holding Current (VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) Z0109MA) Z0103MN VTM IGT Z0107MN IGT Z0109MN IGT V mA

Rate of Change of Commutating Current (VD 400 V, ITM 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open, = 250 Hz, with Snubber) Critical Rate of Rise of Off-State Voltage (VD = 67% Rated VDRM, Exponential Waveform, Gate Open, Z0107MN Z0109MN Repetitive Critical Rate of Rise of On-State Current, = 125C Pulse Width = 20 ms, IPKmax 15 A, diG/dt = 1 A/ms, 60 Hz di/dt(c) 1.6 - A/ms

Voltage Current Characteristic of Triacs (Bidirectional Device)

Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal - IH VTM IRRM at VRRM on state IH

All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used.


 

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