Details, datasheet, quote on part number: MSG33001
PartMSG33001
Category
DescriptionSmall-signal Device - Small-signal Transistor - High-frequency Amplifiers And Others
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload MSG33001 datasheet
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Features, Applications

Features

Compatible between high breakdown voltage and high cutoff frequency Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 1.2 mm (height 0.52 mm)

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature

Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO ICEO IEBO hFE S21e2 NF Cob Conditions VCB = 0 VCE = 0 VEB = 0 VCE 3 mA VCE = 10 mA, = 2 GHz VCE = 10 mA, = 2 GHz VCE = 3 mA, = 2 GHz VCB = 1 MHz Min Typ Max Unit nA A GHz dB pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Forward transmission coefficient S21, Reverse transmission coefficient S12 (dB)

 

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NP061A1 Marking = 5Z ;; VCEO(V) = -50 ;; VCEO(Tr2)(V) = ;; IC(A) = -0.08 ;; IC(Tr2)(A) = ;; PT(W) = 0.125 ;; R1(kW ) = 10 ;; R2(Tr2)(kW
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