Details, datasheet, quote on part number: BAS11
CategoryDiscrete => Diodes & Rectifiers => Avalanche Rectifier Diodes
DescriptionBAS11; BAS12; Controlled Avalanche Rectifiers
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BAS11 datasheet
Cross ref.Similar parts: BYD13G
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Features, Applications

FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack.

These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

DESCRIPTION Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating ImplotecTM(1) technology.

Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BAS11 BAS12 VRWM working reverse voltage BAS12 VR continuous reverse voltage BAS11 BAS12 IF(AV) average forward current averaged over any 20 ms period; Ttp = 75 C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; Tamb = 30 C; PCB mounting (see Fig.8); see Figs 3 and 4 IFSM non-repetitive peak forward current 10 ms half sinewave; = Tj max prior to surge; VR = VRRMmax 10 s square wave; = 50 Hz; Tamb mA V PARAMETER repetitive peak reverse voltage V CONDITIONS MIN. MAX. UNIT

repetitive peak reverse power dissipation storage temperature junction temperature

ELECTRICAL CHARACTERISTICS = 25 C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BAS12 IR trr reverse current reverse recovery time VR = VRRMmax; see VR = VRRMmax; = 125 C; see Fig.6 when switched from 1 A; measured 0.25 A; see = 1 MHz; see Fig.7 CONDITIONS = 300 mA; Tj = Tjmax; see = 300 mA; see 0.1 mA MIN. -

THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.8. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length 10 mm VALUE 180 340 UNIT K/W


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BAS116 BAS116; Low-leakage Diode;; Package: SOT23 (SST3)
BAS12 BAS11; BAS12; Controlled Avalanche Rectifiers
BAS15 BAS15; High-speed Diode
BAS16 BAS16; High-speed Diode;; Package: SOT23 (SST3)
BAS16L BAS16L; High-speed Diode
BAS16T BAS16T; High-speed Diode;; Package: SOT416 (EMT3, SMPAK)
BAS16VY BAS16VY; High-speed Switching Diode Array;; Package: SOT363 (UMT6)
BAS16W BAS16W; High-speed Diode;; Package: SOT323 (UMT3, CMPAK)
BAS17 BAS17; Low-voltage Stabistor;; Package: SOT23 (SST3)
BAS19 BAS19; BAS20; BAS21; General Purpose Diodes;; Package: SOT23 (SST3)
BAS20 BAS19; BAS20; BAS21; General Purpose Diodes;; Package: SOT23 (SST3)
BAS21 BAS19; BAS20; BAS21; General Purpose Diodes;; Package: SOT23 (SST3)
BAS216 BAS216; High-speed Switching Diode;; Package: SOD110
BAS21VD BAS21VD; High-voltage Switching Diode Array;; Package: SOT457 (TSOP6, SMT6, SSOT6)
BAS221 BAS221; General Purpose Diode;; Package: SOD110

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