Details, datasheet, quote on part number: BT136-800E
CategoryDiscrete => Thyristors => Triacs
DescriptionBAT160 Series; Schottky Barrier Double Diodes
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136-800E datasheet
Cross ref.Similar parts: TIC201N, TIC201S, FT0409SH, FT0409SF, FT0409SE, FT0409NH, FT0409NF, FT0409NE, FT0410SH, FT0410SF
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Features, Applications

FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectification Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated a SOT223 plastic SMD package.

PINNING BAT160 PIN A k1 n.c. C a1 n.c. S a1 n.c. Fig.2 BAT160A diode configuration (symbol).

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature = 8.3 ms; half sinewave; JEDEC method 100 s PARAMETER CONDITIONS

ELECTRICAL CHARACTERISTICS Tamb 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see A IR reverse current 60 V; note 1; see = 100 C; note 1; see Fig.6 Cd Note 1. Pulse test: = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W diode capacitance = 1 MHz; 4 V; see Fig mA pF PARAMETER CONDITIONS MAX. UNIT


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