|Description||BT136B Series; Triacs|
|Company||Philips Semiconductors (Acquired by NXP)|
|Datasheet||Download BT136B-600 datasheet
Glass passivated triacs in a plastic envelope suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
SYMBOL PARAMETER BT136BBT136BBT136BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. UNIT 4 25PIN 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 107 °C full sine wave; 25 °C prior to surge 10 ms ITM 0.2 A; dIG/dt = 0.2 A/µs GT2- G+ CONDITIONS MIN. -500 5001 MAX. UNIT A2s A/µs °C
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. October 1997 1 Rev 1.100
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 55 MAX. 3.0 3.7 UNIT K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambientHolding current On-state voltage Gate trigger voltage Off-state leakage current
25 °C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS = 67% VDRM(max); = 125 °C; exponential waveform; gate open circuit VDM = 95 °C; IT(RMS) 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/µs... 100 MIN...F 50...G 200 TYP. 250 MAX. UNIT V/µs
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, = 50 Hz; Tmb 107°C.
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, = 50 Hz.Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25°C), versus junction temperature Tj.
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