Details, datasheet, quote on part number: BT136BSeriesE
CategoryDiscrete => Thyristors => Triacs
DescriptionTriacs Sensitive Gate
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136BSeriesE datasheet


Features, Applications

Glass passivated sensitive gate triacs in a full pack, plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

SYMBOL VDRM IT(RMS) ITSM PARAMETER BT136FRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. UNIT V A

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 92 ░C full sine wave; 125 ░C prior to surge; with reapplied VDRM(max) 10 ms ITM 0.2 A; dIG/dt = 0.2 A/Ás GT2- G+ CONDITIONS MIN. -500 5001 MAX. UNIT A2s A/Ás ░C

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/Ás. February 1996 1 Rev 1.100

Ths 25 ░C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. -

SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W

25 ░C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS GT2- G+ MIN. 0.25 TYP. MAX. UNIT V mA

Holding current On-state voltage Gate trigger voltage Off-state leakage current

25 ░C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); = 125 ░C; exponential waveform; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/Ás MIN. TYP. 50 2 MAX. UNIT V/Ás Ás

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, = 50 Hz; Ths 92░C.

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25░C), versus junction temperature Tj.


Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
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