Details, datasheet, quote on part number: BT136F
DescriptionBT136F Series; Triacs
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136F datasheet
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Features, Applications

Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

SYMBOL PARAMETER BT136FBT136FBT136FRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. UNIT 4 25

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 92 C full sine wave; 125 C prior to surge; with reapplied VDRM(max) 10 ms ITM 0.2 A; dIG/dt = 0.2 A/s GT2- G+ CONDITIONS MIN. -500 5001 MAX. UNIT A2s A/s C

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. February 1996 1 Rev 1.100

Ths 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V

SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W

Holding current On-state voltage Gate trigger voltage Off-state leakage current

25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS = 67% VDRM(max)V; = 125 C; exponential waveform; gate open circuit VDM = 95 C; IT(RMS) 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/s... 100 MIN...F 50...G 200 TYP. 250 MAX. UNIT V/s

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, = 50 Hz.

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.


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