Details, datasheet, quote on part number: BT136S-500D
DescriptionBT136S Series; Triacs
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136S-500D datasheet
Cross ref.Similar parts: T405-600B-TR
Find where to buy


Features, Applications

Passivated triacs in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

SYMBOL PARAMETER BT136S VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 4 25 MAX. V A UNIT

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 107 C full sine wave; 25 C prior to surge 10 ms ITM 0.2 A; dIG/dt = 0.2 A/s GT2- G+ CONDITIONS MIN. MAX. -800 800 UNIT A2s A/s C

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.300

SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 75 MAX. 3.0 3.7 UNIT K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint in Fig.14 junction to ambient

25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS 12 V; IGT 12 V; IGT VD = VDRM(max); 125 C MIN. TYP... MAX...F V mA UNIT

Holding current On-state voltage Gate trigger voltage Off-state leakage current

25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT136S (or = 67% VDRM(max); = 125 C; exponential waveform; gate open circuit VDM = 95 C; IT(RMS) 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/s... 100 MIN...F 50 TYP. 250 MAX. UNIT V/s

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, = 50 Hz; Tmb 107C.

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BT136S-500E BT136S Series; Triacs
BT136S-600 Triacs
BT136S-600D BAT160 Series; Schottky Barrier Double Diodes
BT136S-600F Triacs
BT136S-800E Triacs Sensitive Gate
BT136S-800F Triacs
BT136Series BT136S Series; Triacs
BT136SSeries Triacs
BT136SSeriesD Triacs Logic Level
BT136SSeriesE Triacs Sensitive Gate
BT136X BT136X Series; Triacs
BT136X-600 BAT160 Series; Schottky Barrier Double Diodes
BT136X-600F Triacs
BT136X-600G BAT160 Series; Schottky Barrier Double Diodes
BT136X-800 Triacs
BT136X-800E BAT160 Series; Schottky Barrier Double Diodes
BT136X-800F Triacs
BT136XSeries BT136X Series; Triacs
BT137 BT137 Series E; Triacs Sensitive Gate
BT137-500 -
BT137-600 BT137 Series; Triacs

74ALVT16260DL : 74ALVT16260; 12-bit to 24-bit Multiplexed D-type Latches (3-State);; Package: SOT364-1 (TSSOP56), SOT371-1 (SSOP56)

74HCT423DB : 74HC/HCT423; Dual Retriggerable Monostable Multivibrator With Reset;; Package: SOT109-1 (SO16), SOT38-4 (DIP16)

74LVC3G07DP : Triple Buffer With Open-drain Output The 74LVC3G07 is a High-performance, Low-power, Low-voltage, Si-gate CMOS Device And Superior to MOSt Advanced CMOS Compatible TTL Families. Input CAN be Driven From Either 3.3 V or 5 V Devices. This Feature Allows The Use of This Device in a Mi

74LVT16543ADGG : 74LVT16543A; 3.3V LVT 16-bit Registered Transceiver (3-State);; Package: SOT364-1 (TSSOP56), SOT371-1 (SSOP56)

80C652 : RISC->PICmicro Family 80C652; 83C652; CMOS Single-chip 8-bit Microcontrollers

BAS40-05W : 74LVT126; 3.3V Quad Buffer (3-State)

BCP55-10 : BAT160 Series; Schottky Barrier Double Diodes

BT139F500F : BT139 Series H; Triacs High Noise Immunity

BUK7735-55A : BUK7735-55A; Trenchmos (tm) Standard Level Fet

HEF40160B : CMOS/BiCMOS->4000 Family HEF40160B; 4-bit Synchronous Decade Counter With Asynchronous Reset

UAA2068G : UAA2068G; Transmit Chain And Synthesizer With Integrated Vco For Dect

BGU6104 : Wideband Silicon Low-noise Amplifier MMIC The BGU6104 MMIC is a wideband amplifier in Silicon technology for high speed, low-noise applications in a plastic, leadless 6 pin, small outline SOT1209 package.

0-C     D-L     M-R     S-Z