Details, datasheet, quote on part number: BT136X-500F
DescriptionBT136X Series; Triacs
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136X-500F datasheet
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Features, Applications

Passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

SYMBOL PARAMETER BT136XBT136XVDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 4 25 MAX. V A UNIT

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 92 C full sine wave; 25 C prior to surge 10 ms ITM 0.2 A; dIG/dt = 0.2 A/s GT2- G+ CONDITIONS MIN. MAX. -800 800 UNIT A2s A/s C

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.400

Ths 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W

25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS 12 V; IGT 12 V; IGT VD = VDRM(max); 125 C MIN. TYP... MAX...F V mA UNIT

Holding current On-state voltage Gate trigger voltage Off-state leakage current

25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS = 67% VDRM(max); = 125 C; exponential waveform; gate open circuit VDM = 95 C; IT(RMS) 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/s... 100 MIN...F 50 TYP. 250 MAX. UNIT V/s


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