Details, datasheet, quote on part number: BT136XSeriesE
DescriptionBT136X Series; Triacs
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BT136XSeriesE datasheet


Features, Applications

Passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

SYMBOL PARAMETER BT136XBT136XVDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 4 25 MAX. V A UNIT

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 92 C full sine wave; 25 C prior to surge 10 ms ITM 0.2 A; dIG/dt = 0.2 A/s GT2- G+ CONDITIONS MIN. MAX. -800 800 UNIT A2s A/s C

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

1 Although not recommended, off-state voltages to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.400

Ths 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W

25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS 12 V; IGT 12 V; IGT VD = VDRM(max); 125 C MIN. TYP... MAX...F V mA UNIT

Holding current On-state voltage Gate trigger voltage Off-state leakage current

25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS = 67% VDRM(max); = 125 C; exponential waveform; gate open circuit VDM = 95 C; IT(RMS) 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM VD = VDRM(max); 0.1 A; dIG/dt = 5 A/s... 100 MIN...F 50 TYP. 250 MAX. UNIT V/s


Related products with the same datasheet
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP)
BT137 BT137 Series E; Triacs Sensitive Gate
BT137-500 -
BT137-600 BT137 Series; Triacs
BT137-600D BT137-600D; Triacs Logic Level
BT137-600E BAT160 Series; Schottky Barrier Double Diodes
BT137-600F -
BT137-600G BT137 Series; Triacs
BT137-800E BAT160 Series; Schottky Barrier Double Diodes
BT137-800F -
BT137B BT137B Series; Triacs
BT137B-600 Triacs
BT137B-600D BT137B-600D; Triacs Logic Level
BT137B-600E Triacs Sensitive Gate
BT137B-600F Triacs
BT137B-800E Triacs Sensitive Gate
BT137B-800F Triacs
BT137B-800G BT137B Series; Triacs
BT137BSeriesE Triacs Sensitive Gate
BT137F BT137F Series; Triacs
BT137F-500 Triacs

74ALS161BN : CMOS/BiCMOS->LV/LVQ/LVX Family->Low Voltage 74ALS161B/74ALS163B; 4-bit Binary Counter

74F374 : 74F373; 74F374; Octal Transparent Latch (3-State); Octal D Flip-flop (3-State)

74LVC02AD : 74LVC02A; Quad 2-input NOR GATE;; Package: SOT108-1 (SO14), SOT337-1 (SSOP14), SOT402-1 (TSSOP14)

P80C528FB : 80C51 architecture P83C524; P80C528; P83C528; 8-bit Microcontrollers;; Package: SOT187-2 (PLCC44)

PCA1621U/7 : PCA16xx Series; 32 KHZ Watch Circuits With EePROM

PDIUSBH11AD : PDIUSBH11A; Universal Serial Bus Hub

POWERMOSTRANSISTOR : Switching Silicon Diffused Power Transistor

TDA9143/N2 : PAL/SECAM I2c-bus Controlled, Alignment-freE PAL/ntsc/secam Decoder/sync Processor

0-C     D-L     M-R     S-Z