Details, datasheet, quote on part number: TISP4700F3LM
PartTISP4700F3LM
CategoryDiscrete => Thyristors => Fixed Voltage Single Bidirectional
TitleFixed Voltage Single Bidirectional
DescriptionFixed Voltage Single Bidirectional
CompanyPower Innovations
DatasheetDownload TISP4700F3LM datasheet
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Features, Applications
TISP4600F3, TISP4700F3 HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
LMF Package (LM Pkg. with Formed Leads) (Top View)

Device TISP4x00F3 Package LM, Straight Lead DO-92 LM, Straight Lead DO-92 LMF, Formed Lead DO-92 Carrier Bulk Pack Tape And Reel Tape And Reel Order TISP4x00F3LMFR R

Description

These devices are designed to limit overvoltages between a system and the protective ground. The TISP4700F3 is designed for insulation protection of systems such as LANs, and allows a float voltage 500 V without clipping. IEC 60950 and UL 1950 have certain requirements for incoming lines of telephone network voltage (TNV). Any protector from the line to ground must have a voltage rating of 1.6 times the equipment rated voltage. International and European equipment usually have maximum rated voltages 230 V rms, 240 V rms 250 V rms. Multiplying the 250 V value by 1.6 gives a protector V DRM value 400 V. Allowing for operation down C gives a VDRM value C. This need is met by the TISP4600F3. The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. A single device provides 2-point protection. Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The TISP4x00F3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This protection device a DO-92 (LM) cylindrical plastic package.

NOVEMBER 1997 - REVISED JUNE 2003 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

Absolute Maximum Ratings, 25 C (Unless Otherwise Noted)

Rating Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 resistor) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 10/160 (FCC Part 68, 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 10/560 (FCC Part 68, 10/560 voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 50/60 Hz, 1s ITSM di T/dt TJ Tstg IPPSM +150 A A/s TISP4600F3 TISP4700F3 Symbol VDRM Value Unit V

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value 38 A Junction temperature Storage temperature range

NOTES: 1. Initially, the TISP must be in thermal equilibrium with = 25 C. 2. These non-repetitive rated currents are peak values of either polarirty. The surge may be repeated after the TISP returns to its initial conditions.

Component Series resistor for GR-1089-CORE first-level surge survival Series resistor for ITU-T recommendation K.20 and R1, R2 Series resistor for FCC Part 68 9/720 survival Series resistor for FCC Part 10/160, 10/560 survival Min Typ Max Unit

Parameter IDRM Repetitive peak offstate current = V DRM dv/dt = 700 V/ms, R SOURCE = 300 dv/dt = 700 V/ms, R SOURCE 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85V DRM = 100 kHz, 1 V rms, = 100 kHz, 1 V rms, TISP4600F3 TISP4700F3 Test Conditions Min Typ Max 600 700 Unit V A kV/s A pF

V(BO) Breakover voltage I(BO) IH dv/dt ID Coff Breakover current Holding current Critical rate of rise of off-state voltage Off-state current Off-state capacitance

Parameter Test Conditions EIA/JESD51-3 PCB, = 25 C, (see Note 210 mm populated line card, 4-layer PCB, C 57 Min Typ Max 120 C/W Unit

3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

IH IDRM -v VDRM IDRM IH V(BO) ITSM Quadrant III Switching Characteristic I ITSP -i PMXXAJ ID VD VDRM +v I(BO)


 

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