Part  TISP4700F3LM 
Category  Discrete => Thyristors => Fixed Voltage Single Bidirectional 
Title  Fixed Voltage Single Bidirectional 
Description  Fixed Voltage Single Bidirectional 
Company  Power Innovations 
Datasheet  Download TISP4700F3LM datasheet

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Features, Applications 
TISP4600F3, TISP4700F3 HIGH VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS IonImplanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge LMF Package (LM Pkg. with Formed Leads) (Top View) Device TISP4x00F3 Package LM, Straight Lead DO92 LM, Straight Lead DO92 LMF, Formed Lead DO92 Carrier Bulk Pack Tape And Reel Tape And Reel Order TISP4x00F3LMFR R DescriptionThese devices are designed to limit overvoltages between a system and the protective ground. The TISP4700F3 is designed for insulation protection of systems such as LANs, and allows a float voltage 500 V without clipping. IEC 60950 and UL 1950 have certain requirements for incoming lines of telephone network voltage (TNV). Any protector from the line to ground must have a voltage rating of 1.6 times the equipment rated voltage. International and European equipment usually have maximum rated voltages 230 V rms, 240 V rms 250 V rms. Multiplying the 250 V value by 1.6 gives a protector V DRM value 400 V. Allowing for operation down ° C gives a VDRM value ° C. This need is met by the TISP4600F3. The protector consists of a symmetrical voltagetriggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a lowvoltage on state. This lowvoltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. A single device provides 2point protection. Combinations of devices can be used for multipoint protection (e.g. 3point protection between Ring, Tip and Ground). The TISP4x00F3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This protection device a DO92 (LM) cylindrical plastic package. NOVEMBER 1997  REVISED JUNE 2003 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Absolute Maximum Ratings, 25 °C (Unless Otherwise Noted)Rating Repetitive peak offstate voltage Nonrepetitive peak onstate pulse current (see Notes 1 and 2) 2/10 (Telcordia GR1089CORE, 2/10 voltage wave shape) 1/20 (ITUT K.22, 1.2/50 voltage wave shape, 25 resistor) 8/20 (IEC 6100045, combination wave generator, 1.2/50 voltage wave shape) 10/160 (FCC Part 68, 10/160 voltage wave shape) 4/250 (ITUT K.20/21, 10/700 voltage wave shape, simultaneous) 5/310 (ITUT K.20/21, 10/700 voltage wave shape, single) 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 10/560 (FCC Part 68, 10/560 voltage wave shape) 10/1000 (Telcordia GR1089CORE, 10/1000 voltage wave shape) Nonrepetitive peak onstate current (see Notes 1 and 2) 50/60 Hz, 1s ITSM di T/dt TJ Tstg IPPSM +150 A A/µs TISP4600F3 TISP4700F3 Symbol VDRM Value Unit V Initial rate of rise of onstate current, Linear current ramp, Maximum ramp value 38 A Junction temperature Storage temperature range NOTES: 1. Initially, the TISP must be in thermal equilibrium with = 25 °C. 2. These nonrepetitive rated currents are peak values of either polarirty. The surge may be repeated after the TISP returns to its initial conditions. Component Series resistor for GR1089CORE firstlevel surge survival Series resistor for ITUT recommendation K.20 and R1, R2 Series resistor for FCC Part 68 9/720 survival Series resistor for FCC Part 10/160, 10/560 survival Min Typ Max Unit Parameter IDRM Repetitive peak offstate current = ±V DRM dv/dt = ±700 V/ms, R SOURCE = 300 dv/dt = ±700 V/ms, R SOURCE ±5 A, di/dt = +/30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85V DRM = 100 kHz, 1 V rms, = 100 kHz, 1 V rms, TISP4600F3 TISP4700F3 Test Conditions Min Typ Max ±600 ±700 Unit V A kV/µs µA pF V(BO) Breakover voltage I(BO) IH dv/dt ID Coff Breakover current Holding current Critical rate of rise of offstate voltage Offstate current Offstate capacitance Parameter Test Conditions EIA/JESD513 PCB, = 25 °C, (see Note 210 mm populated line card, 4layer PCB, °C 57 Min Typ Max 120 °C/W Unit 3: EIA/JESD512 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. IH IDRM v VDRM IDRM IH V(BO) ITSM Quadrant III Switching Characteristic I ITSP i PMXXAJ ID VD VDRM +v I(BO) 
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