|Category||Discrete => Thyristors => Surge Protectors => Fixed Voltage Single Unidirectional Thyristor Surg|
|Title||Fixed Voltage Single Unidirectional Thyristor Surg|
|Description||Fixed Voltage Single Unidirectional Thyristor Surge Protector|
|Datasheet||Download TISP5070H3BJR datasheet
This TISP« device series protects SLICs, ISDN "U" interfaces and power feeds against overvoltages on the telecom line. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The device is housed in a surface mount SMB (DO-214AA) package. These TISP« devices may be used to protect both IC SLICs and SLICs which use discrete transistors for the driver functions (e.g. TISP5115H3BJ in the Silicon Laboratories Si3210 ProSLICTM circuit).
OVERCURRENT PROTECTION TIP WIRE Th3 Th2 RING WIRE S1b S2b VBAT S1a S2a SLIC PROTECTION TISP5xxx H3BJJANUARY 1998 - REVISED JULY 2001 Specifications are subject to change without notice.
Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply A 5/310 ITU-T K.20/21 rating Ion-Implanted Breakdown Region Precise and Stable VoltageDescription
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This lowvoltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
Device TISP5xxxH3BJ Package BJ (J-Bend DO-214AA/SMB) Carrier Embossed Tape Reeled Order As TISP5xxxH1BJR
This TISP5xxxH3BJ range consists of six voltage variants to meet various maximum system voltage levels to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.Absolute Maximum Ratings, 25 ░C (Unless Otherwise Noted)
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 2/10 Ás voltage wave shape) 8/20 Ás (IEC 1.2/50 Ás voltage, 8/20 current combination wave generator) 10/160 Ás (FCC Part 10/160 Ás voltage wave shape) 5/200 Ás (VDE 10/700 Ás voltage wave shape) 0.5/700 Ás voltage wave shape) 5/310 Ás (ITU-T 10/700 Ás voltage wave shape) 5/310 Ás (FTZ 10/700 Ás voltage wave shape) 10/560 Ás (FCC Part 10/560 Ás voltage wave shape) 10/1000 Ás voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and ms (50 Hz) full sine wave ms (60 Hz) full sine wave Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value 140 A Junction temperature Storage temperature range
NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP5xxxH3BJ must be in thermal equilibrium with = 25 ░C. 3. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. 4. See Figure 10 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/░C for ambient temperatures above 25 ░C.Electrical Characteristics For Terminal Pair, 25 ░C (Unless Otherwise Noted)
dv/dt -1000 V/Ás, Linear voltage ramp, V(BO) Impulse breakover voltage Maximum ramp value -500 V di/dt = -20 A/Ás, Linear current ramp, Maximum ramp value -10 A dv/dt = -750 V/ms, RSOURCE 500 Ás dv/dt +1000 V/Ás, Linear voltage ramp, Maximum ramp value +500 V di/dt = +20 A/Ás, Linear current ramp, Maximum ramp value -5 A, di/dt = +30 mA/msBreakover current Forward voltage Peak forward recovery voltage On-state voltage Holding current
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