|Category||Discrete => Thyristors => Surge Protectors => Fixed Voltage Single Unidirectional Thyristor Surg|
|Title||Fixed Voltage Single Unidirectional Thyristor Surg|
|Description||Fixed Voltage Single Unidirectional Thyristor Surge Protector|
|Datasheet||Download TISP5070H3BJR datasheet
This TISP« device series protects SLICs, ISDN "U" interfaces and power feeds against overvoltages on the telecom line. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The device is housed in a surface mount SMB (DO-214AA) package. These TISP« devices may be used to protect both IC SLICs and SLICs which use discrete transistors for the driver functions (e.g. TISP5115H3BJ in the Silicon Laboratories Si3210 ProSLICTM circuit).
OVERCURRENT PROTECTION TIP WIRE Th3 Th2 RING WIRE S1b S2b VBAT S1a S2a SLIC PROTECTION TISP5xxx H3BJJANUARY 1998 - REVISED JULY 2001 Specifications are subject to change without notice.
Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply A 5/310 ITU-T K.20/21 rating Ion-Implanted Breakdown Region Precise and Stable VoltageDescription
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This lowvoltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
Device TISP5xxxH3BJ Package BJ (J-Bend DO-214AA/SMB) Carrier Embossed Tape Reeled Order As TISP5xxxH1BJR
This TISP5xxxH3BJ range consists of six voltage variants to meet various maximum system voltage levels to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.Absolute Maximum Ratings, 25 ░C (Unless Otherwise Noted)
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 2/10 Ás voltage wave shape) 8/20 Ás (IEC 1.2/50 Ás voltage, 8/20 current combination wave generator) 10/160 Ás (FCC Part 10/160 Ás voltage wave shape) 5/200 Ás (VDE 10/700 Ás voltage wave shape) 0.5/700 Ás voltage wave shape) 5/310 Ás (ITU-T 10/700 Ás voltage wave shape) 5/310 Ás (FTZ 10/700 Ás voltage wave shape) 10/560 Ás (FCC Part 10/560 Ás voltage wave shape) 10/1000 Ás voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and ms (50 Hz) full sine wave ms (60 Hz) full sine wave Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value 140 A Junction temperature Storage temperature range
NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP5xxxH3BJ must be in thermal equilibrium with = 25 ░C. 3. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. 4. See Figure 10 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/░C for ambient temperatures above 25 ░C.Electrical Characteristics For Terminal Pair, 25 ░C (Unless Otherwise Noted)
dv/dt -1000 V/Ás, Linear voltage ramp, V(BO) Impulse breakover voltage Maximum ramp value -500 V di/dt = -20 A/Ás, Linear current ramp, Maximum ramp value -10 A dv/dt = -750 V/ms, RSOURCE 500 Ás dv/dt +1000 V/Ás, Linear voltage ramp, Maximum ramp value +500 V di/dt = +20 A/Ás, Linear current ramp, Maximum ramp value -5 A, di/dt = +30 mA/msBreakover current Forward voltage Peak forward recovery voltage On-state voltage Holding current
|Related products with the same datasheet|
|Some Part number from the same manufacture Power Innovations|
|TISP5080H3BJ Forward-conducting Unidirectional Thyristor Overvoltage Protectors|
|TISP5080H3BJR Fixed Voltage Single Unidirectional Thyristor Surge Protector|
|TISP5110H3BJ Forward-conducting Unidirectional Thyristor Overvoltage Protectors|
|TISP5110H3BJR Fixed Voltage Single Unidirectional Thyristor Surge Protector|
|TISP5150H3BJ Forward-conducting Unidirectional Thyristor Overvoltage Protectors|
|TISP5150H3BJR Fixed Voltage Single Unidirectional Thyristor Surge Protector|
|TISP61060D Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors|
|TISP61060DR Dual Programmable Thyristor Surge Protector|
|TISP61089 Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors|
|TISP61089AD Dual Programmable Overvoltage Protectors - Slic ic|
|TISP61089ADR Dual Programmable Thyristor Surge Protector|
|TISP61089AS Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors|
|TISP61089ASD Dual Programmable Overvoltage Protectors - Slic ic|
|TISP61089ASDR Dual Programmable Thyristor Surge Protector|
|TISP61089D Dual Programmable Overvoltage Protectors - Slic ic|
|TISP61089DR Dual Programmable Thyristor Surge Protector|
|TISP61089S Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors|
|TISP61089SDR Dual Programmable Thyristor Surge Protector|
|TISP61511D Dual Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors|
|TISP61511DR Dual Programmable Thyristor Surge Protector|
1SS294 : Toshiba Diode Silicon Epitaxial Schottky Barrier Type.
2086-6000-00 : RF/microwave Diodes. 1-15 Ghz, Biased And Zero Biased Schottky Detector.
2SB887 : PNP Planar Silicon Darlington Transistor, Driver Application. PNP/NPN Epitaxial Planar Silicon Darlington Transistors Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. High DC current gain. Large current capacity and wide ASO. Low saturation voltage. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).
2SK1908 : N-channel MOS Silicon Fet, Very High-speed Switching Application. Low ON resistance. Ultrahigh-speed switching. Low-voltage drive. Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SK1908-applied equipment. High-density surface mount applications. Small size of 2SK1908-applied equipment. s Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain.
BAV45 : BAV45; Picoampere Diode. Extremely low leakage current: max. 5 pA Low diode capacitance Light insensitive. APPLICATION Clamping Holding Peak follower Time delay circuits Logarithmic amplifiers Protection of insulated gate field-effect transistors. Fig.1 Silicon diode in a metal TO-18 can. It has an extremely low leakage current over a wide temperature range combined with a low capacitance.
FS50KM-06 : N-channel Power MOSFET High-speed Switching Use: 60v, 50a. í10V DRIVE íVDSS. 60V írDS (ON) (MAX). 22m íID. 50A íIntegrated Fast Recovery Diode (TYP.). 65ns íViso. 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed).
H7711-11 : PMT Modules.
H8285 : PMT Modules.
MGR700 : . The MicroMetrics MGR 700 series are general purpose Schottky Barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and VHF frequency bands for pulse shaping, sampling and as fast logic gates. Applications The MGR 700 series Schottky Barrier diodes are designed for use as high level mixers.
NTE583 : Silicon Rectifier Diode, Schottky, RF Switch. Repetitive Peak Reverse Voltage 70V. Forward Continuous Current 15mA..
CMUDM8001 : 100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 12 ohms ; PD: 250 milliwatts ; Package Type: ROHS COMPLIANT, ULTRAMINI-3 ; Number of units in IC: 1.
EEVTG1V471Q : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 470 uF, SURFACE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 470 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 35 volts ; Leakage Current: 164 microamps ; ESR: 120 milliohms ; Mounting Style: Surface Mount Technology ; Operating Temperature: -40 to 125 C (-40 to 257 F).
IRHE3110 : 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.6900 ohms ; Package Type: HERMETIC SEALED, LCC-18 ; Number of units in IC: 1.
SI7844DP-E3 : 6.4 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0220 ohms ; Package Type: POWERPAK-8 ; Number of units in IC: 2.
UM6K1N-TP : SMALL SIGNAL, FET. Epoxy meets 94 V-0 flammability rating Moisture Sensitivity Level 1 Two 2SK3018 transistors in a package. Low On-resistance. Mounting cost and area can be cut in half. Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Marking: K1 MOSFET MAXIMUM RATINGS (Ta = 25░C unless otherwise noted) It is the same ratings.
2N4220LEADFREE : Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-72. s: Polarity: N-Channel ; Number of units in IC: 1.