|Description||Forward-conducting Unidirectional Thyristor Overvoltage Protectors|
|Datasheet||Download TISP5150H3BJ datasheet
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
WAVE SHAPE 10/1000 µs STANDARD GR-1089-CORE ANSI C62.41 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP Adescription
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode. This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.absolute maximum ratings, = 25°C (unless otherwise noted)
RATING `5070 Repetitive peak off-state voltage, (see Note Non-repetitive peak on-state pulse current (see Notes 2, 3 and 2/10 µs voltage wave shape) 8/20 µs (IEC 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 10/160 µs voltage wave shape) 5/200 µs (VDE 10/700 µs voltage wave shape) 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T 10/700 µs voltage wave shape) 5/310 µs (FTZ 10/700 µs voltage wave shape) 10/560 µs (FCC Part 10/560 µs voltage wave shape) 10/1000 µs voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and ms (50 Hz) full sine wave ms (60 Hz) full sine wave Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range NOTES: Exponential current ramp, Maximum ramp value 140 A diT/dt TJ Tstg ITSM to +150 A/µs °C A ITSP A VDRM SYMBOL VALUE V UNIT
See Figure 9 for voltage values at lower temperatures. Initially the TISP5xxxH3BJ must be in thermal equilibrium with = 25°C. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. See Figure 10 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °Celectrical characteristics for terminal pair, = 25°C (unless otherwise noted)
PARAMETER IDRM Repetitive peak offstate current VD = VDRM TEST CONDITIONS 85°C `5070 V(BO) Breakover voltage dv/dt = -750 V/ms, RSOURCE dv/dt -1000 V/µs, Linear voltage ramp, V(BO) Impulse breakover voltage Breakover current Forward voltage Peak forward recovery voltage On-state voltage Holding current Maximum ramp value -500 V di/dt = -20 A/µs, Linear current ramp, Maximum ramp value -10 A I(BO) VF dv/dt = -750 V/ms, 500 µs dv/dt +1000 V/µs, Linear voltage ramp, VFRM Maximum ramp value +500 V di/dt = +20 A/µs, Linear current ramp, Maximum ramp value -5 A, di/dt = +30 mA/ms A `5070 thru 5 V RSOURCE 300 `5070 thru MIN TYP MAX UNIT µAelectrical characteristics for terminal pair, = 25°C (unless otherwise noted) (continued)
to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance.
PARAMETER TEST CONDITIONS EIA/JESD51-3 PCB, = ITSM(1000), RJA Junction to free air thermal resistance = 25 °C, (see Note 210 mm populated line card, 4-layer PCB, 25 °C NOTE 50 MIN TYP MAX 113 °C/W UNIT
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
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12SK40-12SK100 : . 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 ACTUAL SIZE OF TO-220AC PACKAGE FULLY INSULATED PACKAGE Low thermal resistance High switching capability High surge capability 2 High reliability 3 Case: TO-220 molded plastic (Fully Insulated) (U/L Flammability Rating 94V-0) Terminals: Rectangular pins w/ standoff.
2SK2763-01 : N-channel MOSFET.
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CMSD2004S : High Voltage Switching Diode. CMSD2004S SUPERminiTM DUAL SILICON SWITCHING DIODE SERIES CONNECTION : The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D MAXIMUM RATINGS: (TA =25°C) Continuous Reverse Voltage Peak Repetitive.
D170/04 : VRRM (V) = 200-1600 ;; IF(AV) (A) = 170 ;; At TC (oC) = 100 ;; Irms (A) = 270 ;; Ifsm at TVJ (KA) = 4.000 ;; I2t (A2S)X103 = 80.00 ;; Case = W.
FDLL666 : Ultra Fast Diodes.
SFT14G : Glass Passivated. Pakage = TS-1 ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.
UTC2SD1060 : . FEATURE APPLICATIONS *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Collector Cut-Off Current Emitter.
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BD5020-LF : 50 A, 16 V, SILICON, RECTIFIER DIODE. s: Package: ROHS COMPLIANT, PRESSFIT-1 ; Number of Diodes: 1 ; VRRM: 16 volts ; IF: 50000 mA.
CB017C0102J : CAPACITOR, FILM/FOIL, POLYETHYLENE NAPHTHALATE, 25 V, 0.001 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology ; EIA Case Size: 1206 ; Applications: General Purpose ; Operating.
IXTQ75N15 : 75 A, 150 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 150 volts ; rDS(on): 0.0230 ohms ; Package Type: TO-3, TO-3P, 3 PIN ; Number of units in IC: 1.
P21BN820Z5ST : CAPACITOR, CERAMIC, MULTILAYER, 50 V, 0.000082 uF, SURFACE MOUNT, 0201. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 8.20E-5 microF ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67.
PMK50XP : 7.9 A, 20 V, 0.005 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0050 ohms ; PD: 5000 milliwatts ; Package Type: PLASTIC, MS-012, 8 PIN ; Number of units in IC: 1.
T2614S : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.
TIP42CP : 6 A, 100 V, PNP, Si, POWER TRANSISTOR. s: Polarity: PNP ; Package Type: TO-3, TO-3P, 3 PIN.
TPCL4203 : 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; Package Type: THIN, 2-2W1S, CHIPLGA-4 ; Number of units in IC: 2.
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