Details, datasheet, quote on part number: TISP5150H3BJ
PartTISP5150H3BJ
CategoryDiscrete
DescriptionForward-conducting Unidirectional Thyristor Overvoltage Protectors
CompanyPower Innovations
DatasheetDownload TISP5150H3BJ datasheet
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Features, Applications

TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS

Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

WAVE SHAPE 10/1000 s STANDARD GR-1089-CORE ANSI C62.41 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A

description

These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode. This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

absolute maximum ratings, = 25C (unless otherwise noted)

RATING `5070 Repetitive peak off-state voltage, (see Note Non-repetitive peak on-state pulse current (see Notes 2, 3 and 2/10 s voltage wave shape) 8/20 s (IEC 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 10/160 s voltage wave shape) 5/200 s (VDE 10/700 s voltage wave shape) 0.5/700 s voltage wave shape) 5/310 s (ITU-T 10/700 s voltage wave shape) 5/310 s (FTZ 10/700 s voltage wave shape) 10/560 s (FCC Part 10/560 s voltage wave shape) 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and ms (50 Hz) full sine wave ms (60 Hz) full sine wave Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range NOTES: Exponential current ramp, Maximum ramp value 140 A diT/dt TJ Tstg ITSM to +150 A/s C A ITSP A VDRM SYMBOL VALUE V UNIT

See Figure 9 for voltage values at lower temperatures. Initially the TISP5xxxH3BJ must be in thermal equilibrium with = 25C. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. See Figure 10 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C

electrical characteristics for terminal pair, = 25C (unless otherwise noted)

PARAMETER IDRM Repetitive peak offstate current VD = VDRM TEST CONDITIONS 85C `5070 V(BO) Breakover voltage dv/dt = -750 V/ms, RSOURCE dv/dt -1000 V/s, Linear voltage ramp, V(BO) Impulse breakover voltage Breakover current Forward voltage Peak forward recovery voltage On-state voltage Holding current Maximum ramp value -500 V di/dt = -20 A/s, Linear current ramp, Maximum ramp value -10 A I(BO) VF dv/dt = -750 V/ms, 500 s dv/dt +1000 V/s, Linear voltage ramp, VFRM Maximum ramp value +500 V di/dt = +20 A/s, Linear current ramp, Maximum ramp value -5 A, di/dt = +30 mA/ms A `5070 thru 5 V RSOURCE 300 `5070 thru MIN TYP MAX UNIT A

electrical characteristics for terminal pair, = 25C (unless otherwise noted) (continued)

to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance.

PARAMETER TEST CONDITIONS EIA/JESD51-3 PCB, = ITSM(1000), RJA Junction to free air thermal resistance = 25 C, (see Note 210 mm populated line card, 4-layer PCB, 25 C NOTE 50 MIN TYP MAX 113 C/W UNIT

7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.


 

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