|Category||Discrete => Thyristors => Surge Protectors => Dual Programmable Thyristor Surge Protector|
|Title||Dual Programmable Thyristor Surge Protector|
|Description||Dual Programmable Thyristor Surge Protector|
|Datasheet||Download TISP61089ADR datasheet
|Cross ref.||Similar parts: LCP1521SRL|
TISP61089P, TISP61089AP DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
Overvoltage Protection for Negative Rail SLICs Dual Voltage-Tracking Protectors - `61089 for Battery Voltages to......................................... - `61089A for Battery Voltages to..................................... V - Low Gate Triggering Current....................................... mA - High Holding Current............................................... 150 mA Rated for GR-1089-CORE and K.44 Impulses
Package Options - Surface Mount 8-pin Small-Outline Line Feed-Thru Connection (D) Shunt Version Connection (SD) - Through-Hole 8-pin DIP (P)..................................................... UL Recognized ComponentsD Package, P Package Top Views and Device Symbol for Feed-Thru Pin-Out
- No internal connection Terminal typical application names shown in parenthesis
D Package Top View and Device Symbol for Shunt (SD) Pin-Out
- No internal connection Terminal typical application names shown in parenthesis
Device TISP61089 Package D (Small-Outline) Carrier R Tube R Tube Order TISP61089A D (Small-Outline) P (8-pin DIP) TISP61089A D (Small-Outline) Device Package Carrier R Tube R Tube Order TISP61089ASD TISP61089APNOVEMBER 1995 - REVISED AUGUST 2002 Specifications are subject to change without notice.
These `61089 parts are all dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protectors. They are designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The `61089 limits voltages that exceed the SLIC supply rail voltage. The `61089 parameters are specified to allow equipment compliance with Telcordia (formally Bellcore) GR-1089-CORE and ITU-T recommendations K.20, K.21 and K.45. The SLIC line driver section is typically powered from 0 V (ground) and a negative (battery) voltage. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides the high holding current of `61089 SCR avoids d.c. latchup. The `61089 is intended to be used with a series resistance of at least 25 and a suitable overcurrent function for Telcordia compliance. Power fault conditions require a series overcurrent element which either interrupts or reduces the circuit current before the `61089 current rating is exceeded. For equipment compliant to ITU-T recommendations or K.45 only, the series resistor value is set by the coordination requirements. For coordination with 400 V limit GDT, a minimum series resistor value 10 is recommended. The `61089 buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. The regular pin-out for surface mount and through-hole packages is a feed through configuration. Connection to the SLIC is made via the `61089, Ring through pins - 5 and Tip through pins 8. A non-feed-through surface mount (D) package is available. This shunt (SD) version pin-out does not make duplicate connections to pin 5 and pin 8 which increases package creepage distance from ground of the other connections from about mm to over 3 mm. High voltage ringing SLICs, with battery voltages below -100 V and down -155 V, can be protected by the TISP61089B device. Details of this device are in the TISP61089B data sheet.Absolute Maximum Ratings, 85 °C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage, VGK = 0 Repetitive peak gate-cathode voltage, VKA = 0 Non-repetitive peak on-state pulse current (see Notes 1 and 10/1000 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 5/320 µs (ITU-T K.45, K.44 open-circuit voltage wave shape 10/700 µs) 1.2/50 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 2/10 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) Non-repetitive peak on-state current, VGG 60 Hz (see Notes 1 and 900 s Non-repetitive peak gate current, 1/2 µs pulse, cathodes commoned (see Notes 1 and 2) Operating free-air temperature range Junction temperature Storage temperature range IGSM TA TJ Tstg ITSM °C A IPPSM 61089 `61089A Symbol VDRM VGKRM Value Unit V
NOTES: 1. Initially the protector must be in thermal equilibrium with J 85 °C. T he surge may be repeated after the device returns to its initial conditions. Gate voltage ranges are -75 V for the `61089 and -100 V for the `61089A. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero 150 °C lead temperature.
Component CG Gate decoupling capacitor Series resistor for GR-1089-CORE first-level surge survival RS Series resistor for GR-1089-CORE first-level and second-level surge survival Series resistor for GR-1089-CORE intra-building port surge survival Series resistor for K.20, K.21 and K.45 coordination with 400 V primary protector Min Typ 220 Max Unit nF
Parameter ID Off-state current VD = VDRM , VGK 0 2/10 µs, IPP 45 , VGG 220 nF V(BO) Breakover voltage 2/10 µs, IPP 50 , VGG nF 1.2/50 µs, 47 , VGG nF 1.2/50 µs, 52 , VGG nF 2/10 µs, IPP 45 , VGG 220 nF VGK(BO) Gate-cathode impulse breakover voltage Forward voltage Peak forward recovery voltage Holding current Gate reverse current Gate trigger current Gate-cathode trigger voltage Gate switching charge Cathode-anode offstate capacitance 2/10 µs, IPP 50 , VGG nF 1.2/50 µs, 47 , VGG nF 1.2/50 µs, 52 , VGG µs 2/10 µs, IPP 45 , VGG 220 nF VFRM 2/10 µs, IPP 50 , VGG nF 1.2/50 µs, 47 , VGG nF 1.2/50 µs, 52 , VGG nF IH IGKS IGT VGT QGS CKA -1 A, di/dt = 1A/ms, VGG -48 V VGG = VGK = VGKRM, VKA -3 A, tp(g) 20 µs, VGG -3 A, tp(g) 20 µs, VGG V 1.2/50 µs, 47 , VGG = 1 MHz, = 0, (see Note pF V Test Conditions °C V Min Typ Max -5 -50 Unit µA
NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge.
Parameter RJA Junction to free air thermal resistance Test Conditions = 25 °C, EIA/JESD51-3 PCB, EIA/JESD51-2 environment, PTOT W P package 100 D Package Min Typ Max 120 °C/W Unit
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