Details, datasheet, quote on part number: TISP61089BDR
PartTISP61089BDR
CategoryDiscrete => Thyristors => Surge Protectors => Dual Programmable Thyristor Surge Protector
TitleDual Programmable Thyristor Surge Protector
DescriptionDual Programmable Thyristor Surge Protector
CompanyPower Innovations
DatasheetDownload TISP61089BDR datasheet
Cross ref.Similar parts: LCP1531RL, LCP1521SRL
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Features, Applications
TISP61089B DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Dual Voltage-Programmable Protectors - Supports Battery Voltages Down V - Low 5 mA max. Gate Triggering Current - High 150 mA min. Holding Current Rated for LSSGR `1089 Conditions

- No internal connection Terminal typical application names shown in parenthesis

Te rminals K1, K2 and A correspond to the alternative line designators T, R and A, B and C. The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal. SD6XAEB

Device TISP61089B Package D (8-pin Small-Outline) Carrier Embossed Tape Reeled Tube Order TISP61089BDR TISP61089BD

Description

The is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP61089B limits voltages that exceed the SLIC supply rail voltage. The TISP61089B parameters are specified to allow equipment compliance with Bellcore GR-1089-CORE, Issue 2 and ITU-T recommendations K.20, K.21 and K.45.

OCTOBER 2000 - REVISED FEBRUARY 2003 Specifications are subject to change without notice.

The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region -150 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. The protection voltage will then track the negative supply voltage and the overvoltage stress on the SLIC is minimized. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector SCR will switch into a low voltage on-state condition. As the overvoltage subsides, the high holding current of TISP61089B SCR prevents d.c. latchup. The TISP61089B is intended to be used with a series combination 40 or higher resistance and a suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit or become high impedance (see Applications Information). For equipment compliant to ITU-T recommendations or K.45 only, the series resistor value is set by the coordination requirements. For coordination with 400 V limit GDT, a minimum series resistor value 10 is recommended. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The TISP61089B buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. The TISP61089B is available a 8-pin plastic small-outline surface mount package.

Absolute Maximum Ratings, 85 C (Unless Otherwise Noted)

Rating Repetitive peak off-state voltage, VGK = 0 Repetitive peak gate-cathode voltage, VKA = 0 Non-repetitive peak on-state pulse current (see Notes 1 and 10/1000 s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 5/320 s (ITU-T K.45, K.44 open-circuit voltage wave shape 10/700 s) 10/360 s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 1.2/50 s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 2/10 s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4) Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 900 s Non-repetitive peak gate current, 1/2 s pulse, cathodes commoned (see Notes 1 and 2) Operating free-air temperature range Junction temperature Storage temperature range ITSM 25 C Symbol VDRM VGKRM Value -170 -167 Unit V

NOTES: 1. Initially, the protector must be in thermal equilibrium with TJ 85 C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85 C, derate linearly to zero 150 C lead temperature. 3. Values for VGG -100 V. For values at other voltages see Figure 2.

Component CG TISP61089B gate decoupling capacitor TISP61089B series resistor for GR-1089-CORE first-level surge survival TISP61089B series resistor for GR-1089-CORE first-level and second-level surge survival RS TISP61089B series resistor for GR-1089-CORE intra-building port surge survival TISP61089B series resistor for K.20, K.21 and K.45 coordination with 400 V primary protector Min Typ 220 Max Unit nF

Parameter ID V(BO) VGK(BO) VF VFRM IH IGKS IGT VGT CKA Off-state current Breakover voltage Gate-cathode impulse breakover voltage Forward voltage Peak forward recovery voltage Holding current Gate reverse current Gate trigger current Gate-cathode trigger voltage Cathode-anode offstate capacitance VD = VDRM, VGK = 0 Test Conditions 85 C Min Typ Max 100 50 Unit V pF

2/10 s, -100 A, di/dt = -80 A/s, 50 , VGG V 2/10 s, ITM -100 A, di/dt = -80 A/s, 50 , VGG -100 V, (see Note s 2/10 s, 100 A, di/dt = 80 A/s, 50 , (see Note -1 A, di/dt = 1A/ms, VGG -100 V VGG = VGK = VGKRM, VKA A, t p(g) 20 s, VGG A, t p(g) 20 s, VGG = -100 MHz, = 0, (see Note 5)

NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the gate supply voltage value (VGG). 5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge.

Parameter RJA Junction to free air thermal resistance Test Conditions = 25 C, EIA/JESD51-3 PCB, EIA/ JESD51-2 environment, PTOT 1.7 W Min Typ Max 120 Unit C/W


 

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