Details, datasheet, quote on part number: TISP7320F3
CategoryDiscrete => Thyristors => Surge Protectors
DescriptionTriple Bidirectional Thyristor Overvoltage Protectors
CompanyPower Innovations
DatasheetDownload TISP7320F3 datasheet
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1134-5 : RF & Microwave Transistors VHF Portable/mobile Applications. 175 MHz 7.5 VOLTS COMMON EMITTER POUT 0.5 W MIN. WITH 7.0 dB GAIN The 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It with stands very high VSWR under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCER VCES VEBO.

2SJ361 : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BC846AW : NPN Silicon af Transistor. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter.

BTA212BSeriesD : Three Quadrant Triacs Guaranteed Commutation. Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with.

CS411299 : Pow-r-blok Dual & Single Diode ISOlated Module 100 Amperes / up to 1600 Volts.

FS70UMJ-06 : N-channel Power MOSFET High-speed Switching Use: 60v, 70a. ¡4V DRIVE ¡VDSS 60V ¡rDS (ON) (MAX). 7m ¡ID. 70A ¡Integrated Fast Recovery Diode (TYP.) 90ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation.

IRFS540A : 100V N-channel A-FET / Substitute of IRFS540. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current.

LS301 : High Voltage, Super Beta, Monolithic Dual, NPN Transistor. LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS VERY HIGH GAIN LOW OUTPUT CAPACITANCE TIGHT VBE MATCHING HIGH fT hFE @ 1.0µA TYP. COBO = 0.2mV TYP. 5 E2 ABSOLUTE MAXIMUM RATINGS NOTE @ 25°C (unless otherwise noted) Collector Current 5mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation.

N0131SP120-160 : 1200-1600 Phase Control Thyristor - Stud Type.

NTE2389 : MOSFET. N-channel Enhancement Mode, High Speed Switch.. NTE2389 MOSFET N­Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain­Source Voltage, VDS. 60V Drain­Gate Voltage (RGS = 20k), VDGR. 60V Drain Current, ID Continuous. 35A Pulsed. 152A Gate­Source Voltage, VGS. ±30V Maximum Power Dissipation, PD. 125W Operating Junction Temperature, TJ. +175°C.

T709N : SCR/ Diode Presspacks. Periodische Vorwärts- und RückwärtsSpitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state.

BAW56WT : Switching Power dissipation: 200mW (Tamb=25℃) • Collector current: 200mA.

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17PESA564MC19E : RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.25 W, 560000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: ThroughHole, ROHS COMPLIANT ; Resistance Range: 560000 ohms ; Tolerance: 20 +/- % ; Standards and Certifications: RoHS.

1N2128AR : 70 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB. s: Configuration: Single ; Package: DO-5, DO-5, 1 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 70000 mA ; VRRM: 50 volts.

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