Details, datasheet, quote on part number: TISP8250DR
CategoryDiscrete => Thyristors => Surge Protectors => Programmable Unidirectional Thyristor Surge Protec
TitleProgrammable Unidirectional Thyristor Surge Protec
DescriptionProgrammable Unidirectional Thyristor Surge Protector
CompanyPower Innovations
DatasheetDownload TISP8250DR datasheet
Cross ref.Similar parts: TPP25011RL
Find where to buy


Features, Applications

Telecommunication System A 10/1000 Protectors Ion-Implanted Breakdown Region - Precise and Stable Voltage


The is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current triggered modes make the TISP8250 particularly suitable for the protection of ungrounded customer premise equipment. Connected across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-hook condition. In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics. Without external gate activation, the is a fixed voltage protector. The maximum working voltage without clipping 250 V and the protection voltage 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of less than 250 V between the TISP8250 gate and anode (see Figure 2.) By connecting a small value resistor in series with the line conductor and connecting the TISP8250 gate cathode terminals in parallel with the resistor, conductor overcurrents can gate trigger the TISP8250 into conduction. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the device into a low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.

Device TISP8250 Package D, Small-outline Carrier Embossed Tape Reeled Tube Order TISP8250DR TISP8250D

JULY 2000 - REVISED FEBRUARY 2002 Specifications are subject to change without notice.
Absolute Maximum Ratings, 25 C (Unless Otherwise Noted)

Rating Repetitive peak off-state voltage, (see Note 1) Non-repetitive peak on-state pulse current (see Notes 2, 3 and 2/10 s voltage wave shape) 0.2/310 s (CNET 0.5/700 s voltage wave shape) 5/310 s (ITU-T 10/700 s voltage wave shape) 10/700 s voltage wave shape) 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and ms (50 Hz) half sine wave s (50 Hz) rectified sine wave s (50 Hz) rectified sine wave Junction temperature Storage temperature range NOTES: TJ Tstg ITSM C A IPPSM A Symbol VDRM Value 250 Unit V

For voltage values at lower temperatures derate at 0.13 %/C. Initially, the TISP8250 must be in thermal equilibrium with = 25 C. The surge may be repeated after the TISP8250 returns to its initial conditions. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C.

Parameter IDRM V(BO) I(BO) IH VGK IGT ID Coff Repetitive peak offstate current Breakover voltage Forward voltage Holding current Gate-cathode voltage Gate trigger current Off-state current Off-state capacitance VD = VDRM dv/dt = 250 V/ms, RSOURCE = 300 dv/dt = 250 V/ms, RSOURCE 5 A, di/dt = -30 mA/ms 30 mA VAK = 60 MHz, 1 V rms, 5 V Test Conditions 85 C Min Typ Max Unit A pF

Parameter RJA Junctio n to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, = 25 C, (see Note 5) Min Typ Max 170 Unit C/W

NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

Figure 1. Voltage-Current Characteristic for A and K Terminals All Measurements are Referenced to the K Terminal


Some Part number from the same manufacture Power Innovations
TISP83121D Dual-gate Unidirectional Overvoltage Protector
TISP83121DR Dual-gate Unidirectional Thyristor Surge Protector
TISPL758LF3D Integrated Symmetrical And Asymmetrical Bidirectional Overvoltage Protectors For Lucent Technologies L7581/2/3 Line Card Access Switches
TISPL758LF3DR Fixed Voltage Dual Bidirectional Thyristor Surge Protector
TISPPBL1D Dual Forward-conducting P-gate Thyristors For Ericsson Components Slics
TISPPBL1DR Dual Programmable Thyristor Surge Protector
TISPPBL2D Dual Forward-conducting P-gate Thyristors For Ericsson Components Slics
TISPPBL2DR Dual Programmable Thyristor Surge Protector
TISPPBL2SD Programmable Overvoltage Protectors For Ericsson Components PBL 3xxx Slics
TISPPBL2SDR Dual Programmable Thyristor Surge Protector
Y1112 The Fluoractor Y1112 Fluorescent Lamp Starter Switch
2EL4 Bidirectional Thyristor Overvoltage Protectors
BULD50 NPN Silicon Transistor WITH Integrated Diode
7EL2 Bidirectional Thyristor Overvoltage Protectors
BULD25 NPN Silicon Transistor WITH Integrated Diode
TCM1060 DUAL Forward-conducting P-gate Thyristors Programmable Overvoltage Protectors
Same catergory

BU931 : High Voltage Ignition Coil Driver NPN Power Darlington. HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES Symbol V CES V CEO V EBO BM P tot T stg Tj Parameter BU931 Collector-Emitter Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current Base Current Base.

BZY93C10 : Diode Zener 10v.

CZT31C : . CZT31C NPN CZT32C PNP SURFACE MOUNT 2.0W COMPLEMENTARY SILICON POWER TRANSISTORS : The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications to 3.0 amps. MARKING CODE: FULL PART NUMBER MAXIMUM.

FJL6920 : NPN Triple Diffused Planar Silicon Transistor. High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1700V Low Saturation Voltage : VCE(sat) = 3V (Max.) For Color Monitor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage.

FMMT634 : NPN Darlington Transistor. ISSUE 1 APRIL 97 * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified 2A (5K minimum) - typically at 5A COMPLEMENTARY TYPE FMMT734 PARTMARKING DETAIL 634 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation.

LH1512BACTR : . Dual 1 Form A/B, C Solid State Relay Current Limit Protection l/O Isolation, 3750 VRMS Typical RON 10 Load Voltage 200 V Load Current 200 mA High Surge Capability Linear, AC/DC Operation Clean Bounce Free Switching Low Power Consumption SMD Lead Available on Tape and Reel AGENCY APPROVALS ULFile No. E52744 CSACertification 093751 BSI APPLICATIONS.

LM3045 : Lm3045/lm3046/lm3086 Transistor Arrays. The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range They may be used as discrete.

PCH3012 : Device = Scr,diode ;; Maxisimam Operating Junction Temperature( C ) = 125 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pch3012.pdf ;; Outline(dxf) = Pch10016.dxf ;; Remarks =   ;; = ;; = ;; = ;;.

SMA4033 : Array. Sink Driver With Built-in Flywheel Diode. Symbol VCBO VCEO VEBO IC ICP IB IF IFSM PT Tj Tstg Ratings 4 (PW10ms, Single pulse) to +150 Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) min typ max Unit .

SPD25N06S2-40 : E.g. OptiMOS®. Feature Enhancement mode 175C operating temperature Avalanche rated dv/dt rated Maximum Ratings, = 25 C, unless otherwise specified Parameter Continuous drain current Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Electrical Characteristics,.

V0402MHS03 : Multilayer High Speed Transient Voltage Surge Suppressor. Multilayer High Speed Transient Voltage Surge Suppressor The Multilayer High-Speed MHS Series is a very-low capacitance extension to the Littelfuse ML family of Transient Voltage Surge Suppression devices available an 0402 and 0603-size surface mount chip. The MHS series provides protection from ESD and EFT in high-speed data-line and other high frequency.

SiHF10N40D : Next-Generation 400 V, 500 V, And 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down To 0.130 Ω, FOM Down To 7.65 Ω-nC, And Currents From 3 A To 36 A Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130 Ω, FOM Down to 7.65 Ω-nC, and Currents From.

05002-1R4CBMB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000014 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.40E-6 microF ; Capacitance Tolerance: 7 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

AS31D51 : SILICON, STEP RECOVERY DIODE. s: Pin Count: 2 ; VBR: 30 volts ; CT: 1.6 to 3 pF.

BAT38MP : SILICON, KA BAND, MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer.

FCHS20A045 : 20 A, 45 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 20000 mA ; Package: PLASTIC, SIMILAR TO TO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

FKP2O104701G00ESSD : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 1000 V, 0.00047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Through Hole.

KTA1266-BP : 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP ; Package Type: PLASTIC PACKAGE-3.

M49470Q01105KEJ : CAPACITOR, CERAMIC, MULTILAYER, 500 V, BQ, 1 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 500 volts ; Mounting Style: Surface Mount Technology ; Operating.

RI109PC : 1 ELEMENT, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: WIRE ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Rated DC Current: 2000 milliamps ; Operating Temperature: -25 to 110 C (-13 to 230 F).

0-C     D-L     M-R     S-Z