Details, datasheet, quote on part number: M6813GP
PartM6813GP
CategoryDiscrete => Transistors => Bipolar => Bipolar Array
DescriptionPackage = 16 Pin Sop ;; Unit = 7 ;; Input_fct Voltage = H ;; Output Current = Sink ;; Io Max (mA) = 300 ;; Vo Max (V) = 35
CompanyPowerex, Inc.
DatasheetDownload M6813GP datasheet
  

 

Features, Applications

DESCRIPTION M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) 300mA) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range to +85 C)

APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals

INPUT 10.5k 10k GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:

FUNCTION The M63812FP, M63812GP and M63812KP each have seven circuits consisting of NPN transistor.A spikekiller clamping diode is provided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.

Symbol VCEO IF VR Parameter Collector-emitter voltage Collector current

Input voltage Clamping diode forward current Clamping diode reverse voltage = 25C, when mounted on board

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, ~ +85C)

Symbol VO Parameter Output voltage M63812P Collector current (Current per 1 cirIC cuit when 7 circuits are coming on simultaneously) M63812GP M63812KP VIN Input voltage M63812FP Test conditions

Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100%

Symbol V (BR) CEO VCE(sat) VIN(on) h FE Parameter Collector-emitter breakdown voltage Test conditions Limits min 13 50 typ 19 1.2 max Unit A

ICEO = 10A IIN = 10mA Collector-emitter saturation voltage IIN = 150mA "On" input voltage IIN = 10mA Clamping diode forward volltage Clamping diode reverse current DC amplification factor = 35V VCE = 10mA

Symbol ton toff Parameter Turn-on time Turn-off time = 15pF (note 1) Test conditions Limits min typ 140 240 max Unit ns

(1)Pulse generator (PG) characteristics : PRR = 50, VIH 18V (2)Input-output conditions RL=220,Vo=35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes


The collector current values represent the current per circuit.Repeated frequency 10HzThe value the circle represents the value of the simultaneously-operated circuit.Ta = 85C

The collector current values represent the current per circuit.Repeated frequency 10HzThe value the circle represents the value of the simultaneously-operated circuit.Ta = 25C



 

Related products with the same datasheet
M63812GP
M63812KP
M63812P
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