Details, datasheet, quote on part number: DB105S-T
PartDB105S-T
CategoryDiscrete => Bridges => STD Bridge
Description1A,1200V,STD SM Bridge,db-s
CompanyRectron
DatasheetDownload DB105S-T datasheet
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Features, Applications

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
FEATURES

Surge overload rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram

* Epoxy : Device has UL flammability classification * UL listed the recognized component directory, file #E94233

Ratings o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MAXIMUM RATINGS (At 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current 40 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM J, T STG + 150 Amps

ELECTRICAL CHARACTERISTICS (At = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element 1.0A DC Maximum Reverse Current at rated DC Blocking Voltage per element IR 0.5 mAmps 2003-5

NOTE: Suffix "-s" Surface Mount for Dip Bridge.
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60
PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A)
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 1.0
Single Phase Half Wave 60Hz Inductive or Resistive Load

 

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