Details, datasheet, quote on part number: K1S161615M-EI70
PartK1S161615M-EI70
Category
DescriptionDescription = K1S161615M 1M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 1Mx16 ;; Vcc(V) = 3.0 ;; Operating Temperature = i ;; Operating Current(mA) = 30 ;; Standby Current(uA) = 70 ;; Package = 48TBGA ;; Production Status = Engineering Sample ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K1S161615M-EI70 datasheet
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Features, Applications

0.0 Initial Draft - Design target Revised - Deleted Technical Note. - Added package dimension. Revised - Changed Power Up Sequence - Changed operating and standby current ICC1 from 10mA ICC2 from 40mA ISB1 from 80 A ISBD from 15 A

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

FEATURES

The K1S161615M is fabricated by SAMSUNG s advanced CMOS technology using one transistor memory cell. The device support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.

Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs Compatible with Low Power SRAM Deep Power Down: Memory cell data holds invalid Package Type: 48-TBGA

Product Family Operating Temp. Vcc Range Speed (tRC) 70ns Power Dissipation Standby Deep power Operating (ISB1, Max.) down(I SBD, Max.) (ICC2, Max.) 15A 40mA PKG Type


Data cont Data cont Data cont
Function Chip Select Input Deep Power Down Output Enable Input Write Enable Input Address Inputs

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

1. Apply power. 2. Maintain stable power(Vcc min.=2.7V) for a minimum 200s with CS and ZZ high.

(POWER UP) 1. After VCC reaches V CC(Min.), wait 200s with CS and ZZ high. Then you get into the normal operation.

Mode Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write

Power Standby Deep Power Down Standby Active

Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT VCC PD TSTG TA Ratings to 85 Unit W C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.


 

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