Details, datasheet, quote on part number: K1S1616B1M-I
PartK1S1616B1M-I
Category
DescriptionDescription = K1S1616B1M 1M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 1Mx16 ;; Vcc(V) = 1.8 ;; Operating Temperature = i ;; Operating Current(mA) = 25 ;; Standby Current(uA) = 60 ;; Package = 48TBGA ;; Production Status = Engineering Sample ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K1S1616B1M-I datasheet
  

 

Features, Applications

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

FEATURES

The K1S1616B1M is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.

Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 1.7V~2.2V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support Package Type: 48-TBGA-6.00x7.00

Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 60A Operating (ICC2, Max.) 25mA PKG Type


Data cont Data cont Data cont
CS1,CS2 Chip Select Inputs WE A0~A19 Output Enable Input Write Enable Input Address Inputs

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

1. Apply power. 2. Maintain stable power(Vcc min.=1.7V) for a minimum 200 s with CS2=low. 3. Issue read operation at least twice.

Mode Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write

Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN, VOUT VCC PD TSTG TA Ratings to 85 Unit W C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.


 

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