Details, datasheet, quote on part number: K1S321611C-FI70
PartK1S321611C-FI70
Category
DescriptionDescription = K1S321611C 2Mx16 Bit Uni-transistor Random Access Memory ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = i ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 100 ;; Package = 48FBGA 6x8 ;; Production Status = Sample Available ;; Comments = Dual CS
CompanySamsung Semiconductor, Inc.
DatasheetDownload K1S321611C-FI70 datasheet
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Features, Applications

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

FEATURES

The K1S321611C is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.

Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7V~3.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support Package Type: 48-FBGA-6.00x8.00

Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 100A Operating (ICC2, Max.) 35mA PKG Type


Data cont Data cont Data cont
Function Chip Select Inputs Output Enable Input Write Enable Input Address Inputs

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

1. Apply power. 2. Maintain stable power(Vcc min.=2.7V) for a minimum 200s with CS1=high.or CS2=low.

1. After VCC reaches VCC(Min.), wait 200s with CS1 high. Then the device gets into the normal operation.

POWER UP(2) 1. After VCC reaches VCC(Min.), wait 200s with CS2 low. Then the device gets into the normal operation.


 

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