Details, datasheet, quote on part number: K1S321615C-FI70
PartK1S321615C-FI70
Category
DescriptionDescription = K1S321615C 2M X 16 Bit Uni-transistor CMOS RAM ;; Organization = 2Mx16 ;; Vcc(V) = 2.7~3.1 ;; Operating Temperature = i ;; Operating Current(mA) = 35 ;; Standby Current(uA) = 100 ;; Package = 48FBGA ;; Production Status = Eol ;; Comments = Deep Power Down
CompanySamsung Semiconductor, Inc.
DatasheetDownload K1S321615C-FI70 datasheet
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Features, Applications

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

FEATURES

The K1S321615C is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.

Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 2.7V~3.1V Three State Outputs Compatible with Low Power SRAM Deep Power Down: Memory cell data holds invalid

Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 100A Operating (ICC2, Max.) 35mA PKG Type


Data cont Data cont Data cont
CS1,CS2 Chip Select Inputs WE A0~A20 Output Enable Input Write Enable Input Address Inputs

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

1. Apply power. 2. Maintain stable power(Vcc min.=2.7V) for a minimum 200s with CS and ZZ high.

1. After VCC reaches V CC(Min.), wait 200s with CS and ZZ high. Then you get into the normal operation.

CS=VIL, UB or/and LB=VIL ZZ=VIH CS=VIH ZZ=VIH ZZ=VIL Deep Power Down Mode CS=VIH, ZZ=VIH Standby Mode

CS=VIH and ZZ=VIH Power On Initial State (Wait 200 s)

Power Mode Standby Deep Power Down Memory Cell Data Valid Invaild Standby Current( 100 10 Wait Time( 0 200


 

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