Details, datasheet, quote on part number: K1S6416BCC-
PartK1S6416BCC-
CategoryMemory
Description4M x 16 bit Page Mode Uni-Transistor CMOS RAM
The K1S6416BCC is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell.
The device supports 4 page read operation and Industrial temperature range.
The device supports dual chip selection for user interface.
The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.
CompanySamsung Semiconductor, Inc.
DatasheetDownload K1S6416BCC- datasheet
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Features, Applications
4Mx16 bit Page Mode Uni-Transistor Random Access Memory

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

FEATURES

The K1S6416BCC is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.

Process Technology: CMOS Organization: 4M x16 bit Power Supply Voltage: 1.7~2.0V Three State Outputs Compatible with Low Power SRAM Support 4 page read mode Package Type: TBD

Product Family Operating Temp. Vcc Range Speed (tRC) Power Dissipation Standby (ISB1, Max.) 180A(< 85C) Operating (ICC2, Max.) 40mA PKG Type

Data cont Data cont Data cont
Function Power Supply(core / I/O) Ground Upper Byte(I/O9~16) Lower No Connection1)
CS1,CS2 Chip Select Inputs WE A0~A21 Output Enable Input Write Enable Input Address Inputs
1) Reserved for future use 2) VCC and VCCQ should be the same level

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

1. Apply power. 2. Maintain stable power(Vcc min. and VCCQ min.=1.7V) for a minimum 200s with CS1=high.or CS2=low.

1. After VCC reaches VCC(Min.) and VCCQ(Min.), wait 200s with CS1 high. Then the device gets into the normal operation.

POWER UP(2) 1. After VCC reaches VCC(Min.) and VCCQ(Min.), wait 200s with CS2 low. Then the device gets into the normal operation.


 

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SLD-78018362X : General Handling Precautions

AT-FC-P-SM-08-B : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

AT-SC-P-M6-12-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

CL10C6R2BB8ANNC : CAP,CERAMIC,6.2PF,50VDC,.1PF -TOL,.1PF +TOL,C0G TC CODE,-30,30PPM TC,0603 CASE Specifications: Dielectric: Ceramic Composition

 
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