Details, datasheet, quote on part number: M53211600CE0-C
PartM53211600CE0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53211600CE0 16MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x8 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53211600CE0-C datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.
M53211600CE0/CJ0-C Fast Page Mode x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

The Samsung a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53211600CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53211600CE0-C(4K cycles/64ms Ref, SOJ, Solder) M53211600CJ0-C(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1250mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53211600CJ0-C
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