Details, datasheet, quote on part number: M53211600CE0
PartM53211600CE0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53211600CE0 16MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x8 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53211600CE0 datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.
M53211600CE0/CJ0-C Fast Page Mode x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

The Samsung a 16Mx32bits Dynamic RAM high density memory module. The Samsung M53211600CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53211600CE0-C(4K cycles/64ms Ref, SOJ, Solder) M53211600CJ0-C(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDpin & pinout PCB : Height(1250mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

Related products with the same datasheet
M53211600CE0-C
M53211600CJ0-C
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53211600CE0-C Description = M53211600CE0 16MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53211600CJ0 Description = M53211600CJ0 16MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53211600CJ0-C Description = M53211600CE0 16MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200BE0 Description = M53213200BE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200BJ0 Description = M53213200BJ0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200BJ0-C Description = M53213200BE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CE0 Description = M53213200CE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CJ0 Description = M53213200CJ0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CJ0-C Description = M53213200CE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230224CE2 Description = M53230224CE2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Edo ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230224CJ2 Description = M53230224CJ2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Edo ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230224DE2 Description = M53230224DE2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Edo ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230224DJ2 Description = M53230224DJ2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Edo ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230400CB0 Description = M53230400CW0 4MB X 32 DRAM Simm Using 4MB X 4, 4KB/2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230400DB0 Description = M53230400DW0 4M X 32 DRAM Simm Using 4M X 4, 4K/2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230404BT0 Description = M53230404BY0 4MB X 32 DRAM Simm Using 4MB X 16, 4KB/2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230404CT0 Description = M53230404CY0 4MB X 32 DRAM Simm Using 4MB X 16, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230410CB0 Description = M53230410CW0 4MB X 32 DRAM Simm Using 4MB X 4, 4KB/2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230410DB0 Description = M53230410DW0 4M X 32 DRAM Simm Using 4M X 4, 4K/2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230800CB0 Description = M53230800CW0 8MB X 32 DRAM Simm Using 4MB X 4, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53230800DB0 Description = M53230800DW0 8M X 32 DRAM Simm Using 4M X 4, 4K/2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component

KM48S8030DT-FA : Description = KM48S8030DT 2MB X 8Bit X 4 Banks Synchronous DRAM ;; Organization = 8Mx8 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L,10 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = -

KM644002CJ-12 : -> Fast SRAM Description = KM644002C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ;; Organization = 1Mx4 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 160,150,140 ;; Standby Current(mA) = 60,10 ;; Package = 32SOJ ;; Production Status = Eol ;; Comments =

M485L3324BT0-CLA2 : Description = M485L3324BT0 200Pin Non Ecc / Ecc Sodimm Based on 512Mb B-die ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = B3,A2,B0 ;; #of Pin = 200 ;; Power = C,l ;; Component Composition = (32Mx16)x5 ;; Production Status = Customer Sampl

STD80FD3S : Standard Cell Libraries Description = STD80 0.5 Micron STD80 Standard Cell Library ;; Supply Voltage (V) = 5 ;; Technology(micron) = 0.5micron

MC2GH512DMCA : Flash Card The SAMSUNG MultiMediaCard is a universal low cost data storage and communication media. It is designed to cover a wied area of applications as smart phones, cameras, organizers, PDAs, digital recorders, MP3 players, pagers, electronic toys, etc. Targeted features are high mobility and

K7D321874A-HGC37 : 32Mb A-die DDR SRAM Specification

KFG2816D1M-DID : Onenand Specification

AT-LC-P-SM-14-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

AT-LC-U-M5-15-D : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

CL21Y475KAFNNNE : CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7S, 4.7 uF, SURFACE MOUNT, 0805 Specifications: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology ; Opera

K9NBG08U5M-PCB00 : 512M X 8 FLASH 2.7V PROM, 30 ns, PDSO48 Specifications: Memory Category: Flash, PROM ; Density: 4294967 kbits ; Number of Words: 512000 k ; Bits per Word: 8 bits ; Package Type: TSOP, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, LEAD FREE, TSOP1-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 30 ns ; Operating Temperature:

Same catergory

25AA080 : 8K Spi Bus Serial EePROM. Temp. Ranges I I,E The Microchip Technology Inc. 25C080 (25XX080*) are 8 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral InterfaceTM (SPITM) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through.

AAM29LV128MHH103EI : 128 Megabit ( 8 M X 16-bit/16 M X 8-bit ) Mirrorbit 3.0 Volt-only Uniform Sector Flash Memory With Versatilei/o Control.

BS62LV1605 : SRAM. Vcc operation voltage ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: 90mA (@70ns) operating current I -grade: 92mA (@70ns) operating current 6.0uA (Typ.) CMOS standby current High speed access time -70 70ns Automatic power down when chip is deselected Three state.

HYMA6V16733E14HGTG : 16Mx72 Buffered Edo DRAM Dimm. The HYMA6V16733E14HGTG familiy an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted a 168pin printed circuit board with decoupling capacitors. The HYMA6V16733E14HGTG is optimized for application to the systems which are required high density.

IS62C1024L-35Q : 128Kx8. High-speed access time: ns Low active power: 450 mW (typical) Low standby power: 150 W (typical) CMOS standby Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (10%) power supply The ISSI is a low by 8-bit CMOS static.

K4H510638B : = K4H510638B Stacked 512Mb (x4) DDR Sdram ;; Organization = 128Mx4 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = Stacked.

K7A203600A : SB & SPB. = K7A203600A 64K X 36-Bit Synchronous Pipelined Burst SRAM ;; Organization = 64Kx36 ;; Operating Mode = SPB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 3.1,3.1,3.1,3.5,3.8,4.0 ;; Speed-tcyc (MHz) = 225,200,183,167,150,138 ;; I/o Voltage(V) = 2.5,3.3 ;; Package = TQFP ;; Production Status = Eol ;; Comments = Design is Not Recommended.

M381L3313BT1 : = M381L3313BT1 32Mx72 DDR Sdram 184pin Dimm Based on 16Mx8 ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A0,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (16Mx8)x18 ;; Production Status = Eol ;; Comments = -.

TC55VBM416AFTN : Low Power. Organization = 2Mx8/1Mx16 ;; VDD(V) = 3 ;; Package = 48-pin Tsopi ;; Functionlity = Full CMOS ;; Speed(ns) = 40, 55 ;; Comment =.

TC5816BDC : SmartMedia. Smartmedia Density = 2 Megabyte (16 Megabit) ;; Organization = 2MB X 8 ;; Status = End of Life ;; Package = 22 Pin ;; Voltage = 4.5V to 5.5V.

THMY25N11C70 : Form = DIMM-168 Pin ;; Type = Unbuffered ;; Density (MB) = 256MB ;; Config. = 32Mx64 ;; Comp. = 32Mx8 ;; = PC100, PC133 ;; Date = 2001/05/25.

TMS28F512A-10C4FML : ti TMS28F512A, 65 536 BY 8-Bit Flash Memory. Organization. by 8 Bits All Inputs / Outputs TTL-Compatible VCC Tolerance 10% Maximum Access / Minimum Cycle Time 170 ns Industry-Standard Programming Algorithm 10 000 and 1 000 Program / Erase Cycles Latchup Immunity mA on all Input and Output Lines Low Power Dissipation ( VCC ) Active Write. mW Active Read. mW Electrical Erase. mW Standby.

WED2ZL362MS : SSRAM->NBL SSRAM MCP. Density = 72Mb ;; Organization = 2Mx36 ;; Speed MHZ = 150-225 ;; Volt = 2.5 ;; Package = 119 Pbga ;; Temp = C ;;.

GM76C256CL-55 : 32K X 8 STANDARD SRAM, 55 ns, PDIP28. s: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, PLASTIC, DIP-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 55 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

KFKAGH6Q4M-DEB60 : 1G X 16 FLASH 1.8V PROM, 70 ns, PBGA63. s: Memory Category: Flash, PROM ; Density: 17179869 kbits ; Number of Words: 1000000 k ; Bits per Word: 16 bits ; Package Type: 10 X 13 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 ; Pins: 63 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 70 ns ; Operating Temperature: -30 to 85 C (-22 to 185 F).

MR37V12841A-XXXMP : 128M X 1 SPI BUS SERIAL EEPROM, PDSO16. s: Density: 128057 kbits ; Number of Words: 128000 k ; Bits per Word: 1 bits ; Bus Type: Serial ; Production Status: Full Production ; Data Rate: 33 MHz ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Package Type: 0.375 INCH, 1.27 MM PITCH, PLASTIC, SOP-16, SOP ; Pins: 16 ; Operating Range: Commercial ; Operating.

W3EG7265S202JD3M : 64M X 72 DDR DRAM, 0.75 ns, DMA184. s: Memory Category: DRAM Chip ; Density: 4831838 kbits ; Number of Words: 64000 k ; Bits per Word: 72 bits ; Package Type: ROHS COMPLIANT, DIMM-184 ; Pins: 184 ; Supply Voltage: 2.5V ; Access Time: 0.7500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z