Details, datasheet, quote on part number: M53213200BE0
PartM53213200BE0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53213200BE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x16 ;; Production Status = Eol ;; Comments = Solder
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53213200BE0 datasheet
  

 

Features, Applications

Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

The 3rd. generation of 64M DRAM components are applied for this module.
M53213200BE0/BJ0-C Fast Page Mode x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

The Samsung a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53213200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53213200BE0-C(4K cycles/64ms Ref, SOJ, Solder) M53213200BJ0-C(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDpin & pinout PCB : Height(1420mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

Related products with the same datasheet
M53213200BE0-C
M53213200BJ0-C
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M53213200BE0-C Description = M53213200BE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200BJ0 Description = M53213200BJ0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200BJ0-C Description = M53213200BE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CE0 Description = M53213200CE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CJ0 Description = M53213200CJ0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53213200CJ0-C Description = M53213200CE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
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M53230224CJ2 Description = M53230224CJ2 2MB X 32 DRAM Simm Using 1MB X 16, 1KB Refresh, 5V ;; Density(MB) = 8 ;; Organization = 2Mx32 ;; Mode = Edo ;; Refresh = 1K/16ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
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