Details, datasheet, quote on part number: M53230404CY0-C
PartM53230404CY0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53230404CY0 4MB X 32 DRAM Simm Using 4MB X 16, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53230404CY0-C datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.

The Samsung a 4Mx32bits Dynamic RAM high density memory module. The Samsung M53230404CY0/CT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53230404CY0-C(4K cycles/64ms Ref, TSOP, Solder) M53230404CT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component

Pin Name - PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53230404CT0-C
M53230404CY0
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