Details, datasheet, quote on part number: M53230810DW0/DB0
PartM53230810DW0/DB0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53230810DW0 8M X 32 DRAM Simm Using 4M X 4, 4K/2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx32 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x16 ;; Production Status = Eol ;; Comments = Gold,solder
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53230810DW0/DB0 datasheet
  

 

Features, Applications

The Samsung a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53230800DW0-C(4096 cycles/64ms Ref, SOJ, Solder) M53230800DB0-C(4096 cycles/64ms Ref, SOJ, Gold) M53230810DW0-C(2048 cycles/32ms Ref, SOJ, Solder) M53230810DB0-C(2048 cycles/32ms Ref, SOJ, Gold) Extended Data Out CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V10% power supply

1st Gen. JEDEC standard PDPin & pinout PCB : Height(1000mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs(4K Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, to 70C)

Item Supply Voltage Ground Input High Voltage Input Low Voltage : VCC+2.0V/20ns, Pulse width is measured at VCC. : -2.0V/20ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max VCC+1*1 0.8 Unit

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

Symbol ICC5 ICC6 II(L) IO(L) VOH VOL ICC5 ICC6 II(L) IO(L) VOH VOL Speed -50 -60 Dont care Dont care -50 -60 Dont care Dont care M53230800DW0/DB0 Min

: Operating Current * (RAS, CAS, Address cycling @tRC=min) : Standby Current (RAS=CAS=W=VIH) : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) : EDO Mode Current * (RAS=VIL, CAS Address cycling : tHPC=min) : Standby Current (RAS=CAS=W=Vcc-0.2V) : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under V) : Output Leakage Current(Data Out is disabled, 0V VOUTVcc) : Output High Voltage Level (IOH -5mA) : Output Low Voltage Level (IOL = 4.2mA)

* NOTE ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle, tHPC.


 

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