Details, datasheet, quote on part number: M53233200CJ0-C
PartM53233200CJ0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53233200CE0 32MB X 32 DRAM Simm Using 16MB X 4, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx32 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x16 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53233200CJ0-C datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.

The Samsung a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53233200CE0/CJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53233200CE0-C(4K cycles/64ms Ref, SOJ, Solder) M53233200CJ0-C(4K cycles/64ms Ref, SOJ, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1420mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53233200CE0-C
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