Details, datasheet, quote on part number: M53611601BJ0-C
PartM53611601BJ0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53611601BE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x8+(16Mx1)x4 ;; Production Status = Eol ;; Comments = Solder,w,parity
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53611601BJ0-C datasheet
  

 

Features, Applications

Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
M53611601BE0/BJ0-C Fast Page Mode x 36 DRAM SIMM Using 16Mx1, 4K Refresh, 5V

The Samsung a 16Mx36bits Dynamic RAM high density memory module. The Samsung M53611601BE0/BJ0-C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53611601BE0-C(4K cycles/64ms Ref, SOJ, Solder) M53611601BJ0-C(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1250mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53611601BE0-C
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