Details, datasheet, quote on part number: M53613201BJ0-C
PartM53613201BJ0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53613201BE0/M53613201BJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x16+(16Mx1)x8 ;; Production Status = Eol ;; Comments = Solder,w,parity
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53613201BJ0-C datasheet
  

 

Features, Applications

Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

M53613201BE0/BJ0-C Fast Page Mode x 36 DRAM SIMM Using 16Mx1, 4K Refresh, 5V

The Samsung a 32Mx36bits Dynamic RAM high density memory module. The Samsung M53613201BE0/BJ0-C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53613201BE0-C(4K cycles/64ms Ref, SOJ, Solder) M53613201BJ0-C(4K cycles/64ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1420mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53613201BE0-C
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