Details, datasheet, quote on part number: M53620405BT0
PartM53620405BT0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53620405BY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page Q/c ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2+(4Mx4)x1 ;; Production Status = Eol ;; Comments = Solder,w,parity
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53620405BT0 datasheet
  

 

Features, Applications

Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
M53620405BY0/BT0-C Fast Page Mode x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620405BY0/BT0-C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single Inline Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53620405BY0-C(4K cycles/64ms Ref, TSOP, Solder) M53620405BT0-C(4K cycles/64ms Ref, TSOP, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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M53620405BT0-C
M53620405BY0
M53620405BY0-C
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M53620405BT0-C Description = M53620405BY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page Q/c ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
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M53620410CW0
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M53620410DW0
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M53620412DB0 Description = M53620412DB0 4M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620800CB0 Description = M53620800CW0 8MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
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M53620805BT0 Description = M53620805BY0 8MBx36 DRAM Simm Using 4MBx16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53620810CB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
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M53620812CB0 Description = M53620812CW0 8MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620812DB0 Description = M53620812DW0 8M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
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