Details, datasheet, quote on part number: M53620405CT0
PartM53620405CT0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53620405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2+(4Mx4)x1 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53620405CT0 datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.
M53620405CY0/CT0-C Fast Page Mode x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620405CY0/CT0-C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single Inline Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53620405CY0-C(4K cycles/64ms Ref, TSOP, Solder) M53620405CT0-C(4K cycles/64ms Ref, TSOP, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

Related products with the same datasheet
M53620405CT0-C
M53620405CY0
M53620405CY0-C
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53620405CT0-C Description = M53620405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53620410CB0 Fast Page Mode 4mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620410CW0
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M53620410DW0
M53620412CB0 Description = M53620412CW0 4MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620412DB0 Description = M53620412DB0 4M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620800CB0 Description = M53620800CW0 8MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53620800DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620800DW0
M53620805BT0 Description = M53620805BY0 8MBx36 DRAM Simm Using 4MBx16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53620810CB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810CW0
M53620810CW0/CB0 8mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v With Fast Page Mode
M53620810DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
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M53620812CB0 Description = M53620812CW0 8MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620812DB0 Description = M53620812DW0 8M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
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