Details, datasheet, quote on part number: M53620405CY0-C
PartM53620405CY0-C
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53620405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2+(4Mx4)x1 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53620405CY0-C datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.
M53620405CY0/CT0-C Fast Page Mode x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620405CY0/CT0-C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single Inline Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53620405CY0-C(4K cycles/64ms Ref, TSOP, Solder) M53620405CT0-C(4K cycles/64ms Ref, TSOP, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

Related products with the same datasheet
M53620405CT0-C
M53620405CY0
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53620410CB0 Fast Page Mode 4mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620410CW0
M53620410CW0/CB0 4mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v With Fast Page Mode
M53620410DB0 Fast Page Mode 4mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620410DW0
M53620412CB0 Description = M53620412CW0 4MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620412DB0 Description = M53620412DB0 4M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620800CB0 Description = M53620800CW0 8MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53620800DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620800DW0
M53620805BT0 Description = M53620805BY0 8MBx36 DRAM Simm Using 4MBx16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53620810CB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810CW0
M53620810CW0/CB0 8mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v With Fast Page Mode
M53620810DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810DW0
M53620812CB0 Description = M53620812CW0 8MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620812DB0 Description = M53620812DW0 8M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53631601BE0 Description = M53631601BE0 16MBx36 DRAM Simm Using 16MBx4 & 16MBx1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601BJ0 Description = M53631601BJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CE0 Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component

K4S56163LC-RFR :

K6F1016V3M-TB85 : Description = K6F1016V3M 64Kx16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 64Kx16 ;; Vcc(V) = 3.0~3.6 ;; Speed-tAA(ns) = 70,85 ;; Operating Temperature = 0~70,-40~85 ;; Operating Current(mA) = 80 ;; Standby Current(uA) = 5 ;; Package = 44TSOP2,48uBGA ;; Production Sta

KA2659D : Linear Integrated Circuit

KG80AO222 : Gate Array Libraries Description = KG80 0.5 Micron KG80 Library ;; Supply Voltage (V) = 5 ;; Technology(micron) = 0.5micron

M372V3200CT1-C : Buffered DIMM Description = M372V3200CT1 32Mx72 DRAM Dimm With Ecc Using 16Mx4,4K&8KRefresh,3.3V ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x36+Drive ICx2 ;; Production Status = Eol ;; Comments = Bu

M374S3323AT0 : Unbuffered DIMM Description = M374S3323AT0 32M X 72 Sdram Dimm With Ecc Based on 16M X 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 256 ;; Organization = 32Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L ;; #of Pin = 168 ;; Power = C ;; Component Composition

K4T1G084QF-BCE7T : 128M X 8 DDR DRAM, 0.45 ns, PBGA60 Specifications: Memory Category: DRAM Chip ; Density: 1073742 kbits ; Number of Words: 128000 k ; Bits per Word: 8 bits ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 ; Pins: 60 ; Supply Voltage: 1.8V ; Access Time: 0.4500 ns ; Operating Temperature: 0 to 85 C (32 to 185 F)

KFWAGH6Q4M-DEB6T : IC,EEPROM,NAND FLASH,1GX16,CMOS,BGA,63PIN,PLASTIC Specifications: Memory Category: PROM, EEPROM

M471B5273DH0-CMA : DDR DRAM Specifications: Memory Category: DRAM Chip

 
0-C     D-L     M-R     S-Z