Details, datasheet, quote on part number: M53620412CW0
PartM53620412CW0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53620412CW0 4MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x8 ;; Production Status = Eol ;; Comments = Solder
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53620412CW0 datasheet
  

 

Features, Applications

M53620412CW0/CB0 with Fast Page Mode x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS DRAM in 28-pin SOJ package mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53620412CW0(2048 cycles/32ms Ref, SOJ, Solder) M53620412CB0(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, to 70C)

Item Supply Voltage Ground Input High Voltage Input Low Voltage : VCC+2.0V/20ns, Pulse width is measured at VCC. : -2.0V/20ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max VCC+1*1 0.8 Unit

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

Symbol ICC5 ICC6 II(L) IO(L) VOH VOL Speed -C50 -C60 Dont care -C50 -C60 Dont care -C50 -C60 Dont care Dont care KMM5364003CK/CB0 Min

ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Fast Page Mode Current * (RAS=VIL, CAS Address cycling : tPC=min) ICC5 : Standby Current ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) II(L) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0VVOUTVcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL 4.2mA) * NOTE ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3 , address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle, tPC.


 

Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53620412DB0 Description = M53620412DB0 4M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620800CB0 Description = M53620800CW0 8MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53620800DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620800DW0
M53620805BT0 Description = M53620805BY0 8MBx36 DRAM Simm Using 4MBx16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53620810CB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810CW0
M53620810CW0/CB0 8mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v With Fast Page Mode
M53620810DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810DW0
M53620812CB0 Description = M53620812CW0 8MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620812DB0 Description = M53620812DW0 8M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53631601BE0 Description = M53631601BE0 16MBx36 DRAM Simm Using 16MBx4 & 16MBx1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601BJ0 Description = M53631601BJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CE0 Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0 Description = M53631601CJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0-C Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BE0 Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0 Description = M53633201BJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0-C Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CE0 Description = M53633201CE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
 
0-C     D-L     M-R     S-Z