Details, datasheet, quote on part number: M53620810CW0
PartM53620810CW0
CategoryMemory => DRAM => EDO/FPM DRAM => Modules => 32 MB => FPM
TitleFPM
DescriptionFast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
CompanySamsung Semiconductor, Inc.
 
  
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53620810CW0/CB0 8mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v With Fast Page Mode
M53620810DB0 Fast Page Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53620810DW0
M53620812CB0 Description = M53620812CW0 8MB X 36 DRAM Simm Using 4MB X 4 FP And 4MB X 4 Quad Cas, 2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53620812DB0 Description = M53620812DW0 8M X 36 DRAM Simm Using 4M X 4 FP And 4M X 4 Quad Cas, 2K Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53631601BE0 Description = M53631601BE0 16MBx36 DRAM Simm Using 16MBx4 & 16MBx1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601BJ0 Description = M53631601BJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CE0 Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0 Description = M53631601CJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0-C Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BE0 Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0 Description = M53633201BJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0-C Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CE0 Description = M53633201CE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CJ0 Description = M53633201CJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CJ0-C Description = M53633201CE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640400CB0 Description = M53640400CW0 4MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640405BT0 Description = M53640405BY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo Q/c ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53640405CT0 Description = M53640405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640410CB0 Edo Mode 4mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k, Refresh, 5v
M53640410CW0

K4S280832M-TC/L1H : Description = K4S280832M 8MB X 4Bit X 4Banks Synchronous DRAM ;; Organization = 16Mx8 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75,80,1H,1L,10 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Eol ;; Comments = PC133,PC100,PC66

K7A163680A : SB & SPB Description = K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ;; Organization = 512Kx32 ;; Operating Mode = SPB ;; VDD(V) = 1.8 ;; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ;; Speed-tcyc (MHz) = 250,225,200,167,138 ;; I/o Voltage(V) = 1.8 ;; Package = 100TQFP ;; Production

K9S6408V0A-SSB0 : Smart Media->8M Byte Description = K9S6408V0A 8M X 8Bit SmartMedia(TM) Card ;; Organization = 8Mx8 ;; Operating Voltage(V) = 2.7~3.6 ;; Temperature = 0~55 ;; Speed(ns) = 50 ;; Package = 22PAD ;; Production Status = Eol ;; Comments = -

KM684002AI-17 : -> Fast SRAM Description = KM684002A 512K X 8 Bit High Speed CMOS Static RAM ;; Organization = 512Kx8 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 15,17,20 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 170 ;; Standby Current(mA) = 10 ;; Package = 36SOJ ;; Production Status = Eol ;; Comments = -

K6X4008C1F-BF70 : 512kx8 bit Low Power and Low Voltage CMOS Static RAM

KM736V689 : 64kx36 Synchronous SRAM

SLD-63538261X : General Handling Precautions

AT-FC-A-M5-16-C : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

AT-SC-U-M6-14-B : RF/MICROWAVE FIXED ATTENUATOR, 20 dB INSERTION LOSS-MAX Specifications: Attenuator Type: Fixed ; Insertion Loss: 20 dB ; Attenuation: 1 dB

CL05C6R2CB5NNNC : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0000062 uF, SURFACE MOUNT, 0402 Specifications: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 6.20E-6 microF ; Capacitance Tolerance: 4 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology ; EIA Case S

 
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