Details, datasheet, quote on part number: M53631601CE0
PartM53631601CE0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (16Mx4)x8 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53631601CE0 datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.

The Samsung a 16Mx36bits Dynamic RAM high density memory module. The Samsung M53631601CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single Inline Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53631601CE0-C(4K cycles/64ms Ref, SOJ, Solder) M53631601CJ0-C(4K cycles/64ms Ref, SOJ, Gold) Hyper Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V 10% power supply JEDEC standard PDpin & pinout PCB : Height(1250mil), double sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

Related products with the same datasheet
M53631601CE0-C
M53631601CJ0-C
Some Part number from the same manufacture Samsung Semiconductor, Inc.
M53631601CE0-C Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0 Description = M53631601CJ0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53631601CJ0-C Description = M53631601CE0 16MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 64 ;; Organization = 16Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BE0 Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0 Description = M53633201BJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201BJ0-C Description = M53633201BE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CE0 Description = M53633201CE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CJ0 Description = M53633201CJ0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53633201CJ0-C Description = M53633201CE0 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1, 4KB Refresh, 5V ;; Density(MB) = 128 ;; Organization = 32Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640400CB0 Description = M53640400CW0 4MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640405BT0 Description = M53640405BY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo Q/c ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53640405CT0 Description = M53640405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640410CB0 Edo Mode 4mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k, Refresh, 5v
M53640410CW0
M53640410CW0/CB0 4mx36 DRAM Simm Using 4mx4 And 16m Quad Cas, 4k/2k, Refresh, 5v With Edo Mode
M53640412CB0 Description = M53640412CW0 4MB X 36 DRAM Simm Using 4MB X 4 Edo And 4MB X 4 Quad Cas, 2KB, Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60
M53640800CB0 Description = M53640800CW0 8MB X 36 DRAM Simm Using 4MB X 4 And 16MB Quad Cas, 4KB/2KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component
M53640800DB0 Edo Mode 8mx36dram Simm Using 4mx4 And 16m Quad Cas, 4k/2k Refresh, 5v
M53640800DW0
M53640805BT0 Description = M53640805BY0 8MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4, 4KB Refresh, 5V ;; Density(MB) = 32 ;; Organization = 8Mx36 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60
M53640805CT0 Edo Mode 8mx36dram Simm Using 4mx16 & Quad Cas 4mx4, 4k Refresh, 5v
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