Details, datasheet, quote on part number: M53640405CY0
PartM53640405CY0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53640405CY0 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4, 4KB Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx16)x2+(4Mx4)x1 ;; Production Status = Eol ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53640405CY0 datasheet
  

 

Features, Applications

The 4th. generation of 64Mb DRAM components are applied for this module.
M53640405CY0/CT0-C EDO Mode x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640405CY0/CT0-C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single Inline Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53640405CY0-C(4K cycles/64ms Ref, TSOP, Solder) M53640405CT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5Vą10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


 

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