Details, datasheet, quote on part number: M53640412CW0
PartM53640412CW0
CategoryMemory => DRAM => Async DRAM => Modules => SIMM
TitleSIMM
DescriptionDescription = M53640412CW0 4MB X 36 DRAM Simm Using 4MB X 4 Edo And 4MB X 4 Quad Cas, 2KB, Refresh, 5V ;; Density(MB) = 16 ;; Organization = 4Mx36 ;; Mode = Edo ;; Refresh = 2K/32ms ;; Speed(ns) = 50,60 ;; #of Pin = 72 ;; Component Composition = (4Mx4)x8 ;; Production Status = Eol ;; Comments = Solder
CompanySamsung Semiconductor, Inc.
DatasheetDownload M53640412CW0 datasheet
  

 

Features, Applications

M53640412CW0/CB0 Fast Page Mode with EDO Mode x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V

The Samsung a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS with EDO DRAM in 28-pin SOJ package mounted a 72-pin glass-epoxy substrate. or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.

FEATURES

Part Identification M53640412CW0(2048 cycles/32ms Ref, SOJ, Solder) M53640412CB0(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode with Extended Data Out CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), single sided component

Pin Name PD1 -PD4 Vcc Vss NC Function Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.


Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, to 70C)

Item Supply Voltage Ground Input High Voltage Input Low Voltage : VCC+2.0V/20ns, Pulse width is measured at VCC. : -2.0V/20ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min Typ 5.0 0 Max VCC+1*1 0.8 Unit

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

Symbol ICC5 ICC6 II(L) IO(L) VOH VOL Speed -C50 -C60 Don't care -C50 -C60 Don't care -C50 -C60 Don't care Don't care M53640412CW0/CB0 Min

ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : EDO Mode Current * (RAS=VIL, CAS Address cycling : tHPC=min) ICC5 : Standby Current ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) II(L) : Input Leakage Current (Any input 0VINVcc+0.5V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0VVOUTVcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL 4.2mA) * NOTE ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle, tHPC.


 

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