Details, datasheet, quote on part number: SFPB-62
PartSFPB-62
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers
DescriptionSchottky Barrier Diodes ( Surface Mount ) 20v
CompanySanken Electric Co.
DatasheetDownload SFPB-62 datasheet
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Features, Applications
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)

Electrical Characteristics (Ta = 25C) Tstg (C) max VF (V) IF (A) IR (mA) VR = VRM max IR (H) (mA) VR = VRM Ta =100C max







 

Some Part number from the same manufacture Sanken Electric Co.
SFPB-64
SFPB-66
SFPB-69
SFPB-72 Schottky Barrier Diodes ( Surface Mount ) 20v
SFPB-74
SFPB-76
SFPE-63
SFPE-64
SFPJ-53
SFPJ-63
SFPJ-73
SFPL-52
SFPL-62
SFPL-64
SFPM-52
SFPM-54
SFPM-62
SFPM-64
SFPM-74
SFPW-56
SFPX-62
Same catergory

2N3810 : Package = TO-78 ;; Level = Jans ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.05 ;; (Power W) ta = 0.6 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 450 ;; VCE(sat) (V) = 0.20.

2N6071A : Sensitive Gate Triacs , Package: TO-225, Pins=3. Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate.

5STP34N5200 : . Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Symbol VDSM, VRSM VDRM, VRRM VRSM1 dV/dtcrit Parameter Symbol Conditions IDSM IRSM VDSM, = 125C VRSM, = 125C Forwarde leakage current Reverse leakage.

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MPF102 : Small Signal T092 JFET N Channel 25V, Package: TO-92 (TO-226), Pins=3.

PHP125N06T : Trenchmos Transistor Standard Level Fet. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device very low on-state resistance and has integral zener diodes giving ESD protection It is intended for use in DC-DC converters and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source.

SMBD2835 : High Speed. Silicon Switching Diode Array. Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total power dissipation, 31 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS For detailed information see chapter Package Outlines. Package mounted on epoxy pcb mm/6.

TIP100 : Complementary Silicon Power Darlington Transistors. STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s AUDIO POWER AMPLIFIER s GENERAL POWER SWITCHING s DC-AC CONVERTER s EASY DRIVER FOR LOW VOLTAGE DC MOTOR The is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington.

UTCMJE13005 : . APPLICATIONS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation (Tc=25C) Junction Temperature Storage Temperature Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut off current Emitter-base.

BCX70GLEADFREE : 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC PACKAGE-3.

BUK7610-30118 : 75 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0105 ohms ; Number of units in IC: 1.

HXA2G102Y : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 400 volts ; Leakage Current: 4000 microamps ; ESR: 102 milliohms ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40 to 185 F).

IRFS530A_NL : 10.7 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.1100 ohms ; Package Type: TO-220, TO-220F, 3 PIN ; Number of units in IC: 1.

RC1210JR-07000L : JUMPER, METAL GLAZE/THICK FILM, 0.5 W, 0 ohm, SURFACE MOUNT, 1210. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, LEAD FREE ; Resistance Range: 0.0 ohms ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating Temperature: -55 to 155 C (-67 to 311 F) ; Standards.

RRS070N03TB : 7 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0400 ohms ; Package Type: SOP-8 ; Number of units in IC: 1.

ST-4A100 : RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.25 W, 10 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 3 PINS ; Resistance Range: 10 ohms ; Tolerance: 20 +/- % ; Operating Temperature: -55 to 125 C (-67 to 257 F).

TX-202 : 0.05 MHz - 200 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -25 to 85 C (-13 to 185 F).

1267AY-100M : GENERAL PURPOSE INDUCTOR. s: Application: General Purpose. (4.0mm Max.) DC-DC (TV, DVC, etc.) RoHS Low Profile (H=4.0mm Max). Magnetic Shield. Ideal for a variety of DC-DC converter inductor applications.(TV, DVC, etc.) RoHS compliant (1) Inductance is measured with a LCR meter 4284A (Agilent Technologies) or equivalent. Test frequency (2) DC resistance is measured with a Digital Multimeter TR6871 (Advantest).

 
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