Details, datasheet, quote on part number: K1V26
PartK1V26
CategoryDiscrete => Thyristors
Description
CompanyShindengen America, Inc.
DatasheetDownload K1V26 datasheet
Quote
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Features, Applications

Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current

108, 50Hz sine wave 25, 50Hz sine wave = 180j, non-repetitive 1-cycle peak value =25 , pulse width = 10 s, sine wave, repetitive peak value = 1 kHz =25 , pulse width = 10 s, sine wave, repetitive peak value 60 Hz

Critical Rate of Rise of On-state Current di T/dt

Electrical Characteristics (Tl=25) Item Symbol Breakover Voltage VBO Off-state Current I DRM Breakover Current I BO Holding Current IH On-state Voltage VT Switching Resistance RS Thermal Resistance jl Standard Design with P.C.B. Item

Conditions Symbol IT Assembled in P.C.B., = 25, soldering land 3mm


 

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K1VA10 : Sidac

D1FS4-4073 : 1.1 A, 40 V, SILICON, RECTIFIER DIODE Specifications: Rectifier Configuration / Technology: Schottky ; Package: 1F, 2 PIN ; Number of Diodes: 1 ; VRRM: 40 volts ; IF: 1100 mA

D2S4M4001P10 : 1.5 A, SILICON, RECTIFIER DIODE Specifications: Rectifier Configuration / Technology: Schottky ; Number of Diodes: 1 ; IF: 1500 mA

K1V(A)14-04P15-4061 : 113 V, SIDAC Specifications: Pin Count: 2

P9B40HP2 : 9 A, 400 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 400 volts ; rDS(on): 0.8000 ohms ; Package Type: FB, 3 PIN ; Number of units in IC: 1

S10VTA80-4000 : 3 PHASE, 10 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 150000 mA ; VBR: 800 volts ; Package: MODULE-5 ; Pin Count: 5 ; Number of Diodes: 6

S15WB604003L20 : 15 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 200000 mA ; VBR: 600 volts ; Package: SQIP-4 ; Pin Count: 4 ; Number of Diodes: 4

S2L604001P15 : 1.2 A, SILICON, RECTIFIER DIODE Specifications: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 1200 mA ; trr: 0.0500 ns

S4VB204002L10 : 2.6 A, SILICON, BRIDGE RECTIFIER DIODE Specifications: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 80000 mA ; VBR: 200 volts ; Pin Count: 4 ; Number of Diodes: 4

SF10SC4-4100 : 10 A, SILICON, RECTIFIER DIODE Specifications: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; Package: FTO-220, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2

VRYA15-4062 : SILICON, STABISTOR DIODE Specifications: Diode Type: STABISTOR DIODE ; VF: 7.13 to 8.37 volts ; Package: 1Y, 4 PIN ; Pin Count: 4 ; Number of Diodes: 16

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BC441 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 60V ;; IC(cont) = 2A ;; HFE(min) = 40 ;; HFE(max) = 250 ;; @ Vce/ic = 4V / 500mA ;; FT = 50MHz ;; PD = 1W.

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STD123SF : Small Signal Transistor, General Purpose Bipolar Transistor. Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance RON=0.6(Max.) (IB=1mA) Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature.

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C124Z : CAPACITOR, CERAMIC, 50; 100 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).

CRCW02011K80FNTD : RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 1 %, 200 ppm, 1800 ohm, SURFACE MOUNT, 0201. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0201, CHIP ; Resistance Range: 1800 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power Rating:.

DTA144T-AE3-R : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SOT23, SOT-23, 3 PIN.

SB02-03C(H) : 0.2 A, 30 V, SILICON, SIGNAL DIODE. s: Package: CP, 3 PIN ; Number of Diodes: 1 ; IF: 200 mA.

SR561K34R : RESISTOR, VOLTAGE DEPENDENT, 470 V, 710 J, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Operating DC Voltage: 470 volts.

2N5277 : N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-5. s: Polarity: N-Channel ; Package Type: TO-5, 3 PIN ; Number of units in IC: 1.

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50CE1FD : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 50 V, 1 uF, SURFACE MOUNT. s: : Polarized ; Capacitance Range: 1 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Leakage Current: 3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature: -40 to 105 C (-40 to 221 F).

538-011A2-8LF : CAP,CERAMIC,2P-8PF,350VDC,10% -TOL,10% +TOL. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Type: Variable ; RoHS Compliant: Yes.

 
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