Details, datasheet, quote on part number: SFN203
PartSFN203
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs)
DescriptionDescription = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN105 ;; Page Number = E59
CompanySolitron Devices, Inc.
DatasheetDownload SFN203 datasheet
  
Related products with the same datasheet
SFNF061
SFNF065
SFNF101
SFNF105
SFNF201
SFNF203
SFNO065
SFNS061
SFNS101
SFNS201
Some Part number from the same manufacture Solitron Devices, Inc.
SFN220 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN230 Description = Power MOSFET Transistors 200 Volt N Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 9.00 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 0.400 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns)
SFN250 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN330 Description = Power MOSFET Transistors 400 Volt N. Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 5.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.0 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 35 ;; TD (off)
SFN350 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN430 Description = Power MOSFET Transistors 500 Volt N Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 4.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.5 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 30 ;; TD (off)
SFN450 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFNF061
SFNF120
SFNF201
SFNF220
SFNO065
SNFS061 Description = Power MOSFET Transistors 60 Volt N Channel ;; Chip Type = SVN101 ;; ID(CONT.) a = 1.2 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.500 ;; TD (on) MAX(ns) = 20 ;; TR (on) MAX(ns) = 25 ;; TD (off)
SPD1205 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1210 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1220 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1230 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD2005 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2010 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip

SDT7B07 : Description = Planar Power Transistors 10 Amp NPN ;; Vceo (V) = 100 ;; Hfe Min/max = 20 ;; @ IC(A) = 5.0 ;; Vce (sat) Max(V) = 0.60 ;; @ IC(A) = 5.0 ;; FT Min (MHz) = 30.0 ;; PT Max (W) = 52.0 ;; = ;; Case Type = TO-111/I ;; Chip Type = 185

SDF20N60JEAXHSZ : 20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.3500 ohms ; Number of units in IC: 1

SDF2N100JAASGD1Z : 2 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 6 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF5N100JABEHSN : 5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 2.4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDF5N100JABXGU1Z : 5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 1000 volts ; rDS(on): 2.4 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDFC40JAAEHU1Z : 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 1.2 ohms ; Package Type: TO-254, 3 PIN ; Number of units in IC: 1

SDS10045JAAEKD1 : 10 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 45 volts

SDS10100JFAELD1 : 10 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 10000 mA ; VRRM: 100 volts

SDS18045JABVJD1 : 18 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 18000 mA ; VRRM: 45 volts

SDS18045JEBSKD1 : 18 A, 45 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 18000 mA ; VRRM: 45 volts

SDS60100JAAZJU1 : 70 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Configuration: Single ; Pin Count: 3 ; Number of Diodes: 1 ; IF: 70000 mA ; VRRM: 100 volts

 
0-C     D-L     M-R     S-Z