Details, datasheet, quote on part number: SFN220
PartSFN220
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs)
DescriptionDescription = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
CompanySolitron Devices, Inc.
DatasheetDownload SFN220 datasheet
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Some Part number from the same manufacture Solitron Devices, Inc.
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SFN250 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN330 Description = Power MOSFET Transistors 400 Volt N. Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 5.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.0 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 35 ;; TD (off)
SFN350 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
SFN430 Description = Power MOSFET Transistors 500 Volt N Channel ;; Chip Type = SVN405 ;; ID(CONT.) a = 4.5 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.5 ;; TD (on) MAX(ns) = 30 ;; TR (on) MAX(ns) = 30 ;; TD (off)
SFN450 Description = Low Power Field Effect Transistor ;; Case Style = TO3 ;; Geometry = SVN415 ;; Page Number = E60
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SNFS061 Description = Power MOSFET Transistors 60 Volt N Channel ;; Chip Type = SVN101 ;; ID(CONT.) a = 1.2 ;; VGS(th) Min/max = 2.0-4.0 ;; RDS(on) Max ( W) = 1.500 ;; TD (on) MAX(ns) = 20 ;; TR (on) MAX(ns) = 25 ;; TD (off)
SPD1205 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1210 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1220 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD1230 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 12.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 200 ;; Case Type = DO-4 ;; Chip
SPD2005 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2010 Vrvolts = 100 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2020 Vrvolts = 200 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD2030 Vrvolts = 300 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 20.0 ;; IR@ TJ=25 Cmamps = 0.010 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 300 ;; IF(surge) 8.3ms Amps = 250 ;; Case Type = DO-5 ;; Chip
SPD605 Vrvolts = 50 ;; VFVF @MAX/VOLTS Volts = 1.2 ;; Ifamps = 6.0 ;; IR@ TJ=25 Cmamps = 0.100 ;; Vrrated TJ = 100 C Mamps = 0.10 ;; TRR Max NS = 200 ;; IF(surge) 8.3ms Amps = 150 ;; Case Type = DO-4 ;; Chip

U322 : Description = Low Power Field Effect Transistor ;; Casestyle (TO-) = 92 ;; Geometry = FN71.1 ;; Bvdgoor BVGSS Min (V) = 25 ;; Cissmax (pF) = 5.5 ;; Crssmax (pF) = 1.7 ;; Vgs(off)min (V) = 0.0 ;; Vgs(off)max (V) = 6.0 ;; Lgssmax (nA) = 0.50 ;; Ylsmin (uMhos) = 4500.0 ;; "@Freq (MhZ) = 0.001 ;; I

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SDR30100JABVJU1 : 30 A, 100 V, SILICON, RECTIFIER DIODE Specifications: Number of Diodes: 1 ; VRRM: 100 volts ; IF: 30000 mA ; trr: 0.0500 ns

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